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Inventor

Fung Ka Hing

Inventor
Hsinchu, TW

Overview

5→
Patents
2010–2015
Patent span
Electricity
Primary field (CPC H)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices45%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H01LSemiconductor devices9%
PatentTitleYear
8,952,459'Gate structure having lightly doped region'20158,558,289'Transistors having a composite strain structure, integrated circuits, and fabrication methods thereof'20138,535,998'Method for fabricating a gate structure'20138,405,160'Multi-strained source/drain structures'20137,759,210'Method for forming a MOS device with reduced transient enhanced diffusion'2010

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2010–2015Patents assigned to TAIWAN SEMICONDUCTOR MFG (5)· patent assignee history
2010–2015Based in Hsinchu, TW· patent location history
2013Patents assigned to CHENG CHUN-FAI (3)· patent assignee history
2013Patents assigned to HING FUNG KA (3)· patent assignee history
2013Patents assigned to TSAI HAN-TING (2)· patent assignee history
2013Patents assigned to WANG HAITING (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG52010–2015
CHENG CHUN-FAI32013
HING FUNG KAself32013
TSAI HAN-TING22013
WANG HAITING22013
Locations
LocationPatentsSpan
Hsinchu, TW52010–2015