Inventor
Ryuichi Toba
Inventor
Tokyo, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
C30BSingle-crystal growth9%
LOC269%
H10DInorganic electric semiconductor devices6%
B62DMotor vehicles2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
PatentTitleYear
9,537,053'III nitride semiconductor device and method of manufacturing the same'20179,502,603'Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same'20169,184,338'Semiconductor device and method of manufacturing the same'20159,012,935'Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same'20158,963,290'Semiconductor device and manufacturing method therefor'20158,962,362'Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same'20158,921,227'Semiconductor device assembly and semiconductor device and method of manufacturing the same'20148,878,189'Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same'2014D0711581'Lighting element'2014D0711582'Lighting element'2014D0711583'Lighting element'20148,736,025'III-nitride semiconductor growth substrate, III-nitride semiconductor epitaxial substrate, III-nitride semiconductor element, III-nitride semiconductor freestanding substrate all having improved crystallinity'2014D0703863'Lighting elements'2014D0703862'Lighting elements'20148,216,869'Group III nitride semiconductor and a manufacturing method thereof'20127,256,476'Notched compound semiconductor wafer'20077,256,477'Notched compound semiconductor wafer'20077,256,478'Notched compound semiconductor wafer'20076,998,700'Notched compound semiconductor wafer'20066,450,567'Structure of rear portion of automotive vehicle body'20026,336,970'Surface preparation method and semiconductor device'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2015Based in Tokyo, JP· patent location history
2002Based in Yokohama, JP· patent location history
2006–2017Based in Akita, JP· patent location history
2012–2016Patents assigned to TOBA RYUICHI (10)· patent assignee history
2014–2017Patents assigned to DOWA ELECTRONICS MATERIALS CO LTD (12)· patent assignee history
2014–2016Patents assigned to WAVESQUARE INC (9)· patent assignee history
2014–2016Patents assigned to KADOWAKI YOSHITAKA (8)· patent assignee history
2014–2016Patents assigned to CHO MEOUNG WHAN (7)· patent assignee history
2014Based in Chiyoda-ku, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DOWA ELECTRONICS MATERIALS CO LTD | 12 | 2014–2017 |
| TOBA RYUICHIself | 10 | 2012–2016 |
| WAVESQUARE INC | 9 | 2014–2016 |
| KADOWAKI YOSHITAKA | 8 | 2014–2016 |
| CHO MEOUNG WHAN | 7 | 2014–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 10 | 2002–2015 |
| Akita, JP | 8 | 2006–2017 |
| Chiyoda-ku, JP | 2 | 2014 |
| Yokohama, JP | 1 | 2002 |