Inventor
Won Cheol Seo
Inventor
Ansan-si, KR
Overview
Patents· 55 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers47%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H05BElectric heating5%
B82YSpecific uses or applications of nanostructures1%
F21KNon-electric light sources using luminescence1%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted1%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
10,879,437Wafer-level light emitting diode package and method of fabricating the same202010,069,048Wafer-level light emitting diode package and method of fabricating the same20189,882,102'Wafer-level light emitting diode and wafer-level light emitting diode package'20189,847,371Light emitting diode chip for high voltage operation and light emitting diode package including the same20179,793,440'Light emitting diode having electrode pads'20179,728,687'Quantum platelet converter'20179,543,490'Wafer-level light emitting diode package and method of fabricating the same'20179,431,377'Light emitting device and method of fabricating the same'20169,419,180'Light emitting diode having electrode pads'20169,349,912'Light emitting device having a plurality of light emitting cells'20169,337,175'Light emitting device and method of fabricating the same'20169,293,664'Wafer-level light emitting diode package and method of fabricating the same'20169,252,326'Light emitting device having a plurality of light emitting cells'20169,224,917'Light emitting diode having photonic crystal structure and method of fabricating the same'20159,219,196'Wafer-level light emitting diode package and method of fabricating the same'20159,209,358'Semiconductor device and method of fabricating the same'20159,203,007'Light emitting diode assembly'20159,202,972'Light emitting device having a plurality of light emitting cells'20159,153,750'Wafer-level light emitting diode package and method of fabricating the same'20159,153,745'Light-emitting diode package and method of fabricating the same'20159,070,851'Wafer-level light emitting diode package and method of fabricating the same'20159,059,015'Light emitting device and method of fabricating the same'20159,048,409'Wafer-level light emitting diode package and method of fabricating the same'20159,018,669'Light emitting diode having electrode pads'20159,012,952'Light emitting diode having electrode pads'20158,946,744'Light emitting diode'20158,937,327'Light emitting device having plurality of light emitting cells and method of fabricating the same'20158,912,551'Substrate assembly for crystal growth and fabricating method for light emitting device using the same'20148,895,329'Patterned substrate for light emitting diode and light emitting diode employing the same'20148,742,449'Light emitting diode having electrode pads'20148,680,559'Light emitting diode having electrode extensions for current spreading'20148,648,369'Light emitting device and method of fabricating the same'20148,633,503'Wafer level light emitting diode package and method of fabricating the same'20148,628,983'Light emitting diode and method of fabricating the same'20148,614,458'Patterned substrate for light emitting diode and light emitting diode employing the same'20138,461,770'Light-emitting diode driver'20138,436,369'Light emitting diode having electrode pads'20138,436,389'Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same'20138,395,166'Light emitting diode and method of fabricating the same'20138,354,680'AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell'20138,324,650'Light emitting device and method of fabricating the same'20128,309,971'Light emitting diode having electrode pads'20128,294,170'Light emitting device and method of fabricating the same'20128,294,171'Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same'20128,288,781'Light emitting device and method of fabricating the same'20128,258,533'Light emitting device and method of fabricating the same'20128,242,530'Light emitting device and method for fabricating the same'20128,232,571'Light emitting device having plurality of light emitting cells and method of fabricating the same'20128,232,565'Light emitting diode for AC operation'20128,211,724'Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same'20128,188,489'Light emitting diode for AC operation'20128,183,072'Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same'20127,982,234'Light emitting device and method for fabricating the same'20117,846,755'Light emitting diode having plurality of light emitting cells and method of fabricating the same'20107,709,849'Light emitting diode having plurality of light emitting cells and method of fabricating the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2020Patents assigned to SEOUL SEMICONDUCTOR CO LTD (16)· patent assignee history
2010–2020Based in Ansan-si, KR· patent location history
2011–2014Patents assigned to SEOUL OPTO DEVICE CO LTD (23)· patent assignee history
2012–2017Patents assigned to SEO WON CHEOL (32)· patent assignee history
2012–2017Patents assigned to YOON YEO JIN (14)· patent assignee history
2013–2014Based in Anyang-si, KR· patent location history
2014–2018Patents assigned to SEOUL VIOSYS CO LTD (16)· patent assignee history
2014Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEO WON CHEOLself | 32 | 2012–2017 |
| SEOUL OPTO DEVICE CO LTD | 23 | 2011–2014 |
| SEOUL SEMICONDUCTOR CO LTD | 16 | 2010–2020 |
| SEOUL VIOSYS CO LTD | 16 | 2014–2018 |
| YOON YEO JIN | 14 | 2012–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ansan-si, KR | 52 | 2010–2020 |
| Anyang-si, KR | 2 | 2013–2014 |
| Hwaseong-si, KR | 1 | 2014 |