Inventor
Genyi Wang
Inventor
Wuxi, CN
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
F21KNon-electric light sources using luminescence2%
F21SNon-portable lighting devices2%
F21VFunctional features or details of lighting devices or systems thereof2%
F21YIndexing scheme associated with subclasses f21k, f21l, f21s and f21v, relating to the form or the kind of the light sources or of the colour of the light emitted2%
G06FElectric digital data processing2%
PatentTitleYear
10,976,012Light source apparatus and lighting device202110,885,034Data query method and apparatus, and database system202110,096,699Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor201810,084,036Insulated gate bipolar transistor and manufacturing method therefor20189,954,074Insulated gate bipolar transistor and manufacturing method therefor20189,881,994'Insulated gate bipolar transistor and manufacturing method therefor'20189,673,193'Manufacturing method for reverse conducting insulated gate bipolar transistor'20179,666,682'Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method'20179,620,615'IGBT manufacturing method'20179,607,851'Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure'20179,595,520'IGBT with built-in diode and manufacturing method therefor'20179,590,029'Method for manufacturing insulated gate bipolar transistor'20179,583,587'Method for manufacturing injection-enhanced insulated-gate bipolar transistor'20179,553,164'Method for manufacturing IGBT'20179,502,534'Preparation method for power diode'20169,502,497'Method for preparing power diode'20169,443,926'Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method therefor'20168,927,386'Method for manufacturing deep-trench super PN junctions'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2018Patents assigned to CSMC TECHNOLOGIES FAB1 CO LTD (16)· patent assignee history
2015Patents assigned to CSMC TECHNOLOGIES FAB2 CO LTD (1)· patent assignee history
2015–2018Based in Wuxi, CN· patent location history
2016–2018Based in Jiangsu, CN· patent location history
2017Patents assigned to CMSC TECH FAB1 CO LTD (1)· patent assignee history
2017Patents assigned to CSMC TECH FABI CO LTD (1)· patent assignee history
2018Patents assigned to CSMC TECH FABL CO LTD (1)· patent assignee history
2021Based in Shanghai, CN· patent location history
2021Based in Shenzhen, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CSMC TECHNOLOGIES FAB1 CO LTD | 16 | 2015–2018 |
| CMSC TECH FAB1 CO LTD | 1 | 2017 |
| CSMC TECH FABI CO LTD | 1 | 2017 |
| CSMC TECH FABL CO LTD | 1 | 2018 |
| CSMC TECHNOLOGIES FAB2 CO LTD | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wuxi, CN | 9 | 2015–2018 |
| Jiangsu, CN | 7 | 2016–2018 |
| Shanghai, CN | 1 | 2021 |
| Shenzhen, CN | 1 | 2021 |