Inventor
Rina Tanaka
Inventor
Tokyo, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices34%
H10DInorganic electric semiconductor devices34%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B21CManufacture of metal sheets, wire, rods, tubes, profiles or like semi-manufactured products otherwise than by rolling2%
B23KSoldering or unsoldering2%
C22CAlloys2%
F16LPipes2%
PatentTitleYear
10,937,874Semiconductor device202110,906,125Method for manufacturing electroseamed metal tube, and electroseamed metal tube202110,886,401Semiconductor device with well region and protection region electrically connected by connection region202110,510,843Insulated gate silicon carbide semiconductor device and method for manufacturing same201910,468,487Semiconductor device201910,453,951Semiconductor device having a gate trench and an outside trench201910,347,724Silicon carbide semiconductor device201910,312,233Semiconductor device201910,229,969Power semiconductor device201910,199,457Silicon carbide semiconductor device201910,157,986Silicon carbide semiconductor device and method for manufacturing same20189,972,676Silicon carbide semiconductor device20189,954,072Silicon-carbide semiconductor device and manufacturing method thereof20189,825,164'Silicon carbide semiconductor device and manufacturing method for same'20179,773,874'Silicon carbide semiconductor device and manufacturing method therefor'20179,741,797'Insulated gate silicon carbide semiconductor device and method for manufacturing same'20179,698,221'Semiconductor device'20179,691,858'Silicon carbide semiconductor device and manufacturing method therefor'20179,496,344'Semiconductor device including well regions with different impurity densities'20169,425,261'Silicon-carbide semiconductor device and method for manufacturing the same'20169,337,271'Silicon-carbide semiconductor device and manufacturing method therefor'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2019Patents assigned to MITSUBISHI ELECTRIC CORP (17)· patent assignee history
2016Patents assigned to ABE YUJI (1)· patent assignee history
2016Patents assigned to FURUKAWA AKIHIKO (1)· patent assignee history
2016Patents assigned to IMAIZUMI MASAYUKI (1)· patent assignee history
2016–2019Based in Tokyo, JP· patent location history
2016–2019Based in Chiyoda-ku, JP· patent location history
2021Patents assigned to NISSAN MOTOR (2)· patent assignee history
2021Based in Kanagawa, JP· patent location history
2021Based in Aichi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 17 | 2016–2019 |
| NISSAN MOTOR | 2 | 2021 |
| ABE YUJI | 1 | 2016 |
| FURUKAWA AKIHIKO | 1 | 2016 |
| IMAIZUMI MASAYUKI | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 16 | 2016–2019 |
| Kanagawa, JP | 2 | 2021 |
| Chiyoda-ku, JP | 2 | 2016–2019 |
| Aichi, JP | 1 | 2021 |