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Inventor

Seshu B. Desu

Inventor
Blacksburg, VA, US

Overview

28→
Patents
1990–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices19%
C23CCoating metallic material18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10BElectronic memory devices5%
C04BLime, magnesia4%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium3%
G02BOptical elements, systems or apparatus3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
6,495,208'Near-room temperature CVD synthesis of organic polymer/oxide dielectric nanocomposites'20026,358,863'Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition'20026,316,055'Near-room temperature thermal chemical vapor deposition of oxide films'20016,139,780'Dynamic random access memories with dielectric compositions stable to reduction'20006,071,555'Ferroelectric thin film composites made by metalorganic decomposition'20006,048,737'Method for fabricating a ferroelectric capacitor'20005,887,117'Flash evaporator'19995,873,977'Dry etching of layer structure oxides'19995,817,170'Low temperature seeding process for ferroelectric memory device'19985,817,160'UV absorbing glass'19985,807,774'Simple method of fabricating ferroelectric capacitors'19985,790,366'High temperature electrode-barriers for ferroelectric and other capacitor structures'19985,751,540'Ferroelectric capacitor with rhodium electrodes'19985,717,234'Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)RuO.sub.3 /Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1-x SR.sub.x)RuO.sub.3 capacitors for high dielectric materials'19985,688,980'Organometallic lead precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor'19975,637,352'Preparation method for lead-titanium based thin film'19975,629,229'Metalorganic chemical vapor deposition of (Ba.sub.1-x Sr.sub.x)RuO.sub.3 /(Ba.sub.1-x Sr.sub.x)TIO.sub.3 /(Ba.sub.1-x Sr.sub.x)TiO.sub.3 /(Ba.sub.1- Sr.sub.x)RuO.sub.3 capacitors for high dielectric materials'19975,625,587'Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices'19975,593,727'Production of films of SiO.sub.2 by chemical vapor deposition'19975,527,567'Metalorganic chemical vapor deposition of layered structure oxides'19965,496,437'Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films'19965,491,102'Method of forming multilayered electrodes for ferroelectric devices consisting of conductive layers and interlayers formed by chemical reaction'19965,478,610'Metalorganic chemical vapor deposition of layered structure oxides'19955,431,958'Metalorganic chemical vapor deposition of ferroelectric thin films'19955,382,320'Reactive ion etching of lead zirconate titanate and ruthenium oxide thin films using CHClFCF.sub.3 or CHCl.sub.2 CF.sub.3 as an etch gas'19955,348,631'Method and apparatus for synthesizing lead .beta.-diketonates'19945,262,199'Coating porous materials with metal oxides and other ceramics by MOCVD'19934,949,005'Tantala-silica interference filters and lamps using same'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2000Based in Blacksburg, VA, US· patent location history
1994–2000Patents assigned to SHARP KK (14)· patent assignee history
1994Based in Blackburg, VA, US· patent location history
1995–1998Patents assigned to CERAM INC (7)· patent assignee history
1995–1997Patents assigned to VIRGINIA POLYTECHNIC INST (5)· patent assignee history
1996–2002Patents assigned to VIRGINIA TECH INTELL PROP (13)· patent assignee history
1997–2000Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
1998Based in Blacksberg, VA, US· patent location history
2001–2002Based in Amherst, MA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK141994–2000
VIRGINIA TECH INTELL PROP131996–2002
CERAM INC71995–1998
VIRGINIA POLYTECHNIC INST51995–1997
SAMSUNG ELECTRONICS CO LTD41997–2000
Locations
LocationPatentsSpan
Blacksburg, Virginia, US231990–2000
Amherst, Massachusetts, US32001–2002
Blacksberg, Virginia, US11998
Blackburg, Virginia, US11994