Inventor

YEN-MING CHEN

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 141 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices27%

H10DInorganic electric semiconductor devices25%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%

H10BElectronic memory devices5%

B82YSpecific uses or applications of nanostructures2%

H10NElectric solid-state devices not otherwise provided for2%

G11CStatic stores1%

G06FElectric digital data processing0%

H01GCapacitors0%

PatentTitleYear

12,568,681Active region patterning2026 12,550,697Different isolation liners for different type FinFETs and associated isolation feature fabrication2026 12,520,560Selective gate air spacer formation2026 12,501,601Method for forming different types of devices2025 12,484,292Methods of reducing parasitic capacitance in semicondutor devices2025 12,477,756Metal-insulator-metal structure and methods of fabrication thereof2025 12,453,161Semiconductor device with air-spacer2025 12,433,011Post gate dielectric processing for semiconductor device fabrication2025 12,426,346Semiconductor device and method2025 12,414,477Magnetic random access memory and manufacturing method thereof2025 12,408,363Semiconductor device with phosphorus-doped epitaxial features2025 12,406,952Chip structure with conductive layer2025 12,408,315Flexible merge scheme for source/drain epitaxy regions2025 12,400,429Method and electrical device for training cross-domain classifier2025 12,387,772Structure and method for MRAM devices with a slot via2025 12,389,612Method of forming a stress reduction structure for metal-insulator-metal capacitors2025 12,382,838Semiconductor memory device with spacer protection and method for forming same using multi-step patterning2025 12,382,692Dielectric inner spacers in multi-gate field-effect transistors2025 12,376,351Self-aligned contact air gap formation2025 12,374,655Method of forming package structure by using a wafer chuck with adjustable curved surface2025 12,369,366Convergent fin and nanostructure transistor structure and method2025 12,356,633Semiconductor devices and method of forming the same2025 12,356,647Epitaxial structures for fin-like field effect transistors2025 12,342,604Fin isolation structures of semiconductor devices2025 12,324,232Liner structures2025 12,324,201Integrated circuit device with source/drain barrier2025 12,302,611FinFET structure with a composite stress layer and reduced fin buckling2025 12,300,551Method for forming semiconductor structure2025 12,266,576Semiconductor device and methods of manufacture2025 12,266,655Transistors with recessed silicon cap and method forming same2025 12,266,592Through vias of semiconductor structure and method of forming thereof2025 12,249,531Method for forming semiconductor structure2025 12,249,640Conformal transfer doping method for Fin-like field effect transistor2025 12,218,138Air gap formation between gate spacer and epitaxy structure2025 12,183,697Semiconductor device having a metal pad and a protective layer for corrosion prevention due to exposure to halogen2024 12,171,091Multi-layer high-k gate dielectric structure2024 12,154,947Methods of forming epitaxial source/drain features in semiconductor devices2024 12,142,490Performing annealing process to improve Fin quality of a FinFET semiconductor2024 12,136,673Semiconductor device with self-aligned wavy contact profile and method of forming the same2024 12,136,658Integrated circuit with doped low-k sidewall spacers for gate stacks2024 12,107,165Semiconductor device structure with cap layer2024 12,094,950Nanostructures and method for manufacturing the same2024 12,082,510Magnetic tunnel junction device and method of forming the same2024 12,074,206Integrated circuit device with improved reliability2024 12,068,371Method for FinFET LDD doping2024 12,068,389Semiconductor device including gas spacers and method of manufacture2024 12,068,204Methods of forming epitaxial structures in fin-like field effect transistors2024 12,063,790Structure and method for MRAM devices2024 12,057,419Method for forming chip structure with conductive structure2024 12,051,628Semiconductor device with funnel shape spacer and methods of forming the same2024 12,041,760Multi-layer high-k gate dielectric structure2024 12,037,448Copolymer and method of manufacturing the same2024 12,027,574Resistor structure2024 12,020,988Fin field effect transistor (FinFET) device structure with dummy fin structure2024 12,022,643Multi-layer high-k gate dielectric structure2024 12,009,263Methods of reducing parasitic capacitance in semiconductor devices2024 12,004,431Structure and method for MRAM devices2024 12,002,863Semiconductor device with air-gap spacers2024 11,996,467Method for epitaxial growth and device2024 11,984,489Air spacer for a gate structure of a transistor2024 11,949,002Semiconductor device and method2024 11,937,515MRAM structure for balanced loading2024 11,923,405Metal-insulator-metal structure and methods of fabrication thereof2024 11,917,803Method for forming different types of devices2024 11,908,748Semiconductor devices and methods of forming the same2024 11,901,408Self-aligned contact air gap formation2024 11,894,421Integrated circuit device with source/drain barrier2024 11,862,713Conformal transfer doping method for fin-like field effect transistor2024 11,862,712Methods of semiconductor device fabrication including growing epitaxial features using different carrier gases2024 11,855,207FinFET structure and method with reduced fin buckling2023 11,855,022Shielding structures2023 11,856,743Flexible merge scheme for source/drain epitaxy regions2023 11,854,688Semiconductor device and method2023 11,855,097Air gap formation between gate spacer and epitaxy structure2023 11,848,230Different isolation liners for different type FinFETs and associated isolation feature fabrication2023 11,830,922Semiconductor device with air-spacer2023 11,824,121Semiconductor device with self-aligned wavy contact profile and method of forming the same2023 11,810,825Methods of forming epitaxial structures in fin-like field effect transistors2023 11,791,371Resistor structure2023 11,777,004Fin field effect transistor (FinFET) device structure and method for forming the same2023 11,769,820Methods of manufacturing a FinFET by forming a hollow area in the epitaxial source/drain region2023 11,744,084Semiconductor devices and method of forming the same2023 11,735,484Post gate dielectric processing for semiconductor device fabrication2023 11,735,648Epitaxial structures for fin-like field effect transistors2023 11,728,375Metal-insulator-metal (MIM) capacitor structure2023 11,728,344Hybrid SRAM design with nano-structures2023 11,728,223Semiconductor device and methods of manufacture2023 11,716,910MRAM structure for balanced loading2023 11,705,384Through vias of semiconductor structure and method of forming thereof2023 11,699,737Integrated circuit with doped low-k side wall spacers for gate spacers2023 11,694,933Methods of forming metal gate spacer2023 11,688,759Metal-insulator-metal capacitive structure and methods of fabricating thereof2023 11,688,794Method for epitaxial growth and device2023 11,677,028PMOS FinFET2023 11,670,608Prevention of metal pad corrosion due to exposure to halogen2023 11,631,746Semiconductor device and method of manufacture2023 11,626,505Dielectric inner spacers in multi-gate field-effect transistors2023 11,616,142Semiconductor device with self-aligned wavy contact profile and method of forming the same2023 11,610,841Interconnect structure for semiconductor device and methods of fabrication thereof2023 11,569,236Replacement gate process for FinFET2023 11,569,386Method for forming semiconductor device structure with cap layer2023 11,569,130Fin field effect transistor (FinFET) device structure with dummy Fin structure2023 11,538,927Nanostructures and method for manufacturing the same2022 11,532,695Stress reduction structure for metal-insulator-metal capacitors2022 11,508,736Method for forming different types of devices2022 11,508,827Air spacer for a gate structure of a transistor2022 11,502,182Selective gate air spacer formation2022 11,502,005Semiconductor devices and methods of forming the same2022 11,488,874Semiconductor device with funnel shape spacer and methods of forming the same2022 11,476,352Conformal transfer doping method for fin-like field effect transistor2022 11,477,573Handheld electronic device with multiple speakers2022 11,456,295Air gap formation between gate spacer and epitaxy structure2022 11,444,173Semiconductor device structure with salicide layer and method for forming the same2022 11,437,331Chip structure and method for forming the same2022 11,437,372Liner structures2022 11,411,107FinFET structure and method with reduced fin buckling2022 11,404,324Fin isolation structures of semiconductor devices2022 11,380,639Shielding structures2022 11,362,170Metal-insulator-metal (MIM) capacitor structure and method for forming the same2022 11,362,199Semiconductor device and method2022 11,355,400Using a metal-containing layer as an etching stop layer and to pattern source/drain regions of a FinFET2022 11,342,408Metal-insulator-metal structure and methods of fabrication thereof2022 11,302,535Performing annealing process to improve fin quality of a FinFET semiconductor2022 11,296,077Transistors with recessed silicon cap and method forming same2022 11,289,574Methods of forming epitaxial source/drain features in semiconductor devices2022 11,257,928Method for epitaxial growth and device2022 11,239,142Package structure and method for forming the same2022 11,222,857Method of forming a photoresist over a bond pad to mitigate bond pad corrosion2022 11,223,130Antenna structure2022 11,222,946Semiconductor device including a high density MIM capacitor and method2022 11,217,490Source/drain features with an etch stop layer2022 11,217,486Semiconductor device and method2022 11,205,724Self-aligned gate hard mask and method forming same2021 11,201,228Semiconductor device with air-spacer2021 11,195,951Semiconductor device with self-aligned wavy contact profile and method of forming the same2021 11,189,705Methods of reducing parasitic capacitance in multi-gate field-effect transistors2021 11,189,538Semiconductor structure with polyimide packaging and manufacturing method2021 11,177,211Method of manufacturing via structures of semiconductor devices2021 11,158,509Pattern fidelity enhancement with directional patterning technology2021 11,152,486FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance2021 11,145,564Multi-layer passivation structure and method2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (137)· patent assignee history

2021–2026Based in TW· patent location history

2022Patents assigned to ASUSTEK COMP INC (1)· patent assignee history

2022Patents assigned to CHILISIN ELECTRONICS CORP (1)· patent assignee history

2024Patents assigned to IND TECH RES INST (1)· patent assignee history

2025Patents assigned to NATIONAL SUN YAT SEN UNIVERSITY (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	137	2021–2026
ASUSTEK COMP INC	1	2022
CHILISIN ELECTRONICS CORP	1	2022
IND TECH RES INST	1	2024
NATIONAL SUN YAT SEN UNIVERSITY	1	2025

Locations

Location	Patents	Span
TW	141	2021–2026