Inventor
Yasuaki Yoshida
Inventor
Tokyo, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light38%
B82YSpecific uses or applications of nanostructures19%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation16%
H04NPictorial communication, e.g. television6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light3%
G01RMeasuring electric variables3%
G02BOptical elements, systems or apparatus3%
G06FElectric digital data processing3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
7,804,871'Semiconductor laser'20107,756,180'Semiconductor laser'20107,555,026'Semiconductor laser device'20097,555,025'Semiconductor laser device'20097,173,273'Semiconductor laser device'20076,862,311'Semiconductor laser device'20056,819,688'Semiconductor laser device and optical fiber amplifier'20046,765,944'Semiconductor laser device'20046,697,406'Semiconductor device and photonic semiconductor device applying the semiconductor device'20045,844,822'Simulation method for semiconductor device'19985,835,516'Semiconductor laser device and method of fabricating semiconductor laser device'19985,581,570'Semiconductor laser device'19965,500,869'Semiconductor laser array device, semiconductor laser device, and production methods therefor'19965,371,352'Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions'19945,304,803'Infrared imaging array'19945,262,349'Method for producing a II-VI compound semiconductor device including mercury'19935,168,338'Solid-state hybrid infrared imaging device'19925,003,565'Charge skimming solid-state image array circuit and method including individual photosensor compensation'19914,880,979'Infrared ray detector'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989Patents assigned to MITISUBISHI DENKI KABUSHIKI KA (1)· patent assignee history
1989–1996Based in Itami, JP· patent location history
1991–2010Patents assigned to MITSUBISHI ELECTRIC CORP (18)· patent assignee history
1998–2010Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 18 | 1991–2010 |
| MITISUBISHI DENKI KABUSHIKI KA | 1 | 1989 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 11 | 1998–2010 |
| Itami, JP | 8 | 1989–1996 |