Inventor
Shinichiro Kusunoki
Inventor
Kanagawa, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores32%
H10NElectric solid-state devices not otherwise provided for26%
H10BElectronic memory devices16%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%
B82YSpecific uses or applications of nanostructures5%
H01FMagnets5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
8,437,180'Memory and write control method'20138,331,136'Recording method of nonvolatile memory and nonvolatile memory'20128,194,443'Memory device and memory'20128,149,613'Resistance variable memory device'20128,072,789'Resistance-change memory device'20118,018,759'Tunnel magnetic resistance effect memory'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2013Patents assigned to SONY CORP (6)· patent assignee history
2011–2013Patents assigned to HIGO YUTAKA (5)· patent assignee history
2011–2013Patents assigned to HOSOMI MASANORI (5)· patent assignee history
2011–2013Patents assigned to IKARASHI MINORU (5)· patent assignee history
2011–2013Patents assigned to KANO HIROSHI (5)· patent assignee history
2011–2013Based in Kanagawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 6 | 2011–2013 |
| HIGO YUTAKA | 5 | 2011–2013 |
| HOSOMI MASANORI | 5 | 2011–2013 |
| IKARASHI MINORU | 5 | 2011–2013 |
| KANO HIROSHI | 5 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 6 | 2011–2013 |