Inventor
Deborah A. Neumayer
Inventor
Danbury, CT, US
Overview
Patents· 82 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10DInorganic electric semiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
H01LSemiconductor devices9%
C23CCoating metallic material6%
Y10TTechnical subjects covered by former us classification5%
H10BElectronic memory devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
10,767,084Enhanced adhesive materials and processes for 3D applications202010,727,114Interconnect structure including airgaps and substractively etched metal lines202010,685,323Blockchain ledgers of material spectral signatures for supply chain integrity management202010,684,246On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling202010,585,060On-chip biosensors with nanometer scale glass-like carbon electrodes and improved adhesive coupling202010,541,151Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication202010,467,586Blockchain ledgers of material spectral signatures for supply chain integrity management201910,043,923Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation20189,994,741Enhanced adhesive materials and processes for 3D applications20189,984,940Selective and conformal passivation layer for 3D high-mobility channel devices20189,881,793'Neutral hard mask and its application to graphoepitaxy-based directed self-assembly (DSA) patterning'20189,698,043'Shallow trench isolation for semiconductor devices'20179,698,339'Magnetic tunnel junction encapsulation using hydrogenated amorphous semiconductor material'20179,691,972'Low temperature encapsulation for magnetic tunnel junction'20179,679,775'Selective dopant junction for a group III-V semiconductor device'20179,590,054'Low temperature spacer for advanced semiconductor devices'20179,515,252'Low degradation MRAM encapsulation process using silicon-rich silicon nitride film'20169,484,403'Boron rich nitride cap for total ionizing dose mitigation in SOI devices'20169,484,248'Patternable dielectric film structure with improved lithography and method of fabricating same'20169,472,450'Graphene cap for copper interconnect structures'20169,418,846'Selective dopant junction for a group III-V semiconductor device'20169,293,557'Low temperature spacer for advanced semiconductor devices'20169,231,063'Boron rich nitride cap for total ionizing dose mitigation in SOI devices'20169,112,068'Laser doping of crystalline semiconductors using a dopant-containing amorphous silicon stack for dopant source and passivation'20158,895,433'Method of forming a graphene cap for copper interconnect structures'20148,680,511'Bilayer gate dielectric with low equivalent oxide thickness for graphene devices'20148,623,761'Method of forming a graphene cap for copper interconnect structures'20148,618,183'Materials containing voids with void size controlled on the nanometer scale'20138,618,663'Patternable dielectric film structure with improved lithography and method of fabricating same'20138,604,337'Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cell'20138,530,886'Nitride gate dielectric for graphene MOSFET'20138,519,260'Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cell'20138,461,039'Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication'20138,455,292'Deposition of germanium film'20138,373,271'Interconnect structure with an oxygen-doped SiC antireflective coating and method of fabrication'20138,268,411'Materials containing voids with void size controlled on the nanometer scale'20128,202,783'Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication'20128,101,150'Control of carbon nanotube diameter using CVD or PECVD growth'20128,101,236'Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding'20128,097,932'Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality'20127,915,180'SiCOH film preparation using precursors with built-in porogen functionality'20117,892,648'SiCOH dielectric material with improved toughness and improved Si-C bonding'20117,790,566'Semiconductor surface treatment for epitaxial growth'20107,745,863'Flip FERAM cell and method to form same'20107,674,521'Materials containing voids with void size controlled on the nanometer scale'20107,628,974'Control of carbon nanotube diameter using CVD or PECVD growth'20097,566,938'Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures'20097,521,377'SiCOH film preparation using precursors with built-in porogen functionality'20097,491,658'Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality'20097,479,306'SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same'20097,402,857'Flip FERAM cell and method to form same'20087,357,977'Ultralow dielectric constant layer with controlled biaxial stress'20087,217,969'Flip FERAM cell and method to form same'20077,186,573'Flip FERAM cell and method to form same'20077,049,247'Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made'20067,015,152'Method of film deposition, and fabrication of structures'20066,984,591'Precursor source mixtures'20066,984,415'Delivery systems for gases for gases via the sublimation of solid precursors'20066,982,230'Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures'20066,888,714'Tuneable ferroelectric decoupling capacitor'20056,777,809'BEOL decoupling capacitor'20046,773,982'Feram cell with internal oxygen source and method of oxygen release'20046,664,186'Method of film deposition, and fabrication of structures'20036,653,246'High dielectric constant materials'20036,555,859'Flip FERAM cell and method to form same'20036,541,331'Method of manufacturing high dielectric constant material'20036,525,427'BEOL decoupling capacitor'20036,511,876'High mobility FETS using A1203 as a gate oxide'20036,507,476'Tuneable ferroelectric decoupling capacitor'20036,388,285'Feram cell with internal oxygen source and method of oxygen release'20026,344,660'Thin-film field-effect transistor with organic semiconductor requiring low operating voltages'20026,333,202'Flip FERAM cell and method to form same'20016,255,122'Amorphous dielectric capacitors on silicon'20016,203,613'Atomic layer deposition with nitrate containing precursors'20016,172,385'Multilayer ferroelectric capacitor structure'20016,002,031'Metal alkoxyalkoxidecarboxylates and use to form films'19995,981,970'Thin-film field-effect transistor with organic semiconductor requiring low operating voltages'19995,962,654'Alkoxyalkoxides and use to form films'19995,946,551'Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric'19995,675,028'Bisamido azides of gallium, aluminum and indium and their use as precursors for the growth of nitride films'19975,330,843'Water resistant vermiculite articles and method of their manufacture'19945,244,740'Water resistant/repellant vermiculite articles and method of their manufacture'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–1994Based in Evanston, IL, US· patent location history
1997–2020Based in Danbury, CT, US· patent location history
1999–2020Patents assigned to IBM (73)· patent assignee history
2012–2016Patents assigned to NEUMAYER DEBORAH A (16)· patent assignee history
2012–2016Patents assigned to GRILL ALFRED (8)· patent assignee history
2012–2016Patents assigned to LIN QINGHUANG (8)· patent assignee history
2012–2020Based in Yorktown Heights, NY, US· patent location history
2014–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 73 | 1999–2020 |
| NEUMAYER DEBORAH Aself | 16 | 2012–2016 |
| GRILL ALFRED | 8 | 2012–2016 |
| LIN QINGHUANG | 8 | 2012–2016 |
| SAMSUNG ELECTRONICS CO LTD | 4 | 2014–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Danbury, CT, US | 77 | 1997–2020 |
| Yorktown Heights, New York, US | 3 | 2012–2020 |
| Evanston, Illinois, US | 2 | 1993–1994 |