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Inventor

Fumio Kawahigashi

Inventor
Tokyo, JP

Overview

4→
Patents
2004
Patent span
Chemistry
Primary field (CPC C)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth50%
Y10TTechnical subjects covered by former us classification50%
PatentTitleYear
6,767,400'Crystal growth method'20046,764,547'Crystal growth apparatus'20046,740,160'Crystal growing apparatus'20046,702,892'Production device for high-quality silicon single crystals'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004Patents assigned to SUMITOMO MITSUBISHI SILICON (4)· patent assignee history
2004Based in Tokyo, JP· patent location history
2004Based in Saga, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO MITSUBISHI SILICON42004
Locations
LocationPatentsSpan
Tokyo, JP32004
Saga, JP12004