Inventor
Kenichi Matsushita
Inventor
Tokyo, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices13%
LOC2311%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G02BOptical elements, systems or apparatus4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems4%
G06FElectric digital data processing2%
H01FMagnets2%
H04JMultiplex communication2%
PatentTitleYear
D0927646Residual pressure release valve2021D0926933Residual pressure release valve2021D0926934Residual pressure release valve2021D0926935Residual pressure release valve2021D0924361Residual pressure release valve202110,811,406Semiconductor device and diode202010,651,169Semiconductor device and diode202010,587,448Transmission device, reception device, and transmission method202010,468,512Semiconductor device with insulated gate bipolar transistor (IGBT) having multiple resistors20199,876,011Semiconductor device20189,496,332'Semiconductor device'20169,299,695'Semiconductor device'20168,735,989'Semiconductor device that includes main element having insulated gate bipolar transistor and sense element having resistor and insulated gate bipolar transistor'20148,604,544'Semiconductor device'20138,502,309'Semiconductor device including field effect transistor for use as a high-speed switching device and a power device'20137,998,849'Semiconductor device used as high-speed switching device and power device'20117,864,021'Integrated circuit device'20117,692,242'Semiconductor device used as high-speed switching device and power device'20107,663,186'Semiconductor device'20107,646,059'Semiconductor device including field effect transistor for use as a high-speed switching device and a power device'20107,633,153'Semiconductor module'20097,579,669'Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof'20097,531,876'Semiconductor device having power semiconductor elements'20097,514,783'Semiconductor module'20097,138,698'Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof'20066,822,313'Diode'20045,883,402'Semiconductor device and protection method'19995,695,540'Method of spacing fibers of optical fiber tapes and coupling the fibers'19975,417,734'Method of producing optical fiber couplers using rectifier rods to provide even heat distribution'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–1997Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (2)· patent assignee history
1995–2020Based in Kanagawa, JP· patent location history
1999–2020Patents assigned to TOSHIBA KK (22)· patent assignee history
1999–2016Based in Tokyo, JP· patent location history
2009Based in Meguro-ku, JP· patent location history
2013–2014Patents assigned to MATSUSHITA KENICHI (3)· patent assignee history
2016–2020Based in Nonoichi Ishikawa, JP· patent location history
2019–2020Patents assigned to TOSHIBA ELECTRONIC DEVICES & STORAGE CORP (3)· patent assignee history
2021Patents assigned to SMC CORP (5)· patent assignee history
2021Based in Moriya-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 22 | 1999–2020 |
| SMC CORP | 5 | 2021 |
| MATSUSHITA KENICHIself | 3 | 2013–2014 |
| TOSHIBA ELECTRONIC DEVICES & STORAGE CORP | 3 | 2019–2020 |
| SUMITOMO ELECTRIC INDUSTRIES | 2 | 1995–1997 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 15 | 1999–2016 |
| Moriya-shi, JP | 5 | 2021 |
| Nonoichi Ishikawa, JP | 5 | 2016–2020 |
| Kanagawa, JP | 3 | 1995–2020 |
| Meguro-ku, JP | 1 | 2009 |