Inventor
Kathleen Marie Doverspike
Inventor
Cary, NC, US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers45%
B82YSpecific uses or applications of nanostructures18%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01LSemiconductor devices6%
C23CCoating metallic material2%
C30BSingle-crystal growth2%
PatentTitleYear
RE046588'Group III nitride LED with undoped cladding layer'2017RE046589'Group III nitride LED with undoped cladding layer and multiple quantum well'20179,112,083'Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'2015RE045517'Vertical geometry InGaN LED'2015RE045059'Group III nitride LED with undoped cladding layer'20148,227,268'Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'2012RE042007'Vertical geometry InGaN LED'20107,692,209'Group III nitride LED with undoped cladding layer'20107,531,840'Light emitting diode with metal coupling structure'20097,482,183'Light emitting diode with degenerate coupling structure'20097,312,474'Group III nitride based superlattice structures'20077,170,097'Inverted light emitting diode on conductive substrate'20077,071,490'Group III nitride LED with silicon carbide substrate'20067,034,328'Vertical geometry InGaN LED'20066,987,281'Group III nitride contact structures for light emitting devices'20066,958,497'Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures'20056,952,024'Group III nitride LED with silicon carbide cladding layer'20056,906,352'Group III nitride LED with undoped cladding layer and multiple quantum well'20056,800,876'Group III nitride LED with undoped cladding layer (5000.137)'20046,784,461'Group III nitride light emitting devices with progressively graded layers'20046,717,185'Light emitting devices with Group III nitride contact layer and superlattice'20046,630,690'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'20036,610,551'Vertical geometry InGaN LED'20036,534,797'Group III nitride light emitting devices with gallium-free layers'20036,492,193'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'20026,459,100'Vertical geometry ingan LED'20026,373,077'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'20026,201,262'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure'20016,187,606'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'20015,665,430'Chemical vapor deposition method for depositing diamond using a high temperature vacuum substrate mount'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997Based in Alexandria, VA, US· patent location history
2001–2017Patents assigned to CREE INC (29)· patent assignee history
2001–2017Based in Cary, NC, US· patent location history
2004–2015Based in Apex, NC, US· patent location history
2012–2015Patents assigned to DOVERSPIKE KATHLEEN MARIE (4)· patent assignee history
2012–2015Patents assigned to BERGMANN MICHAEL JOHN (3)· patent assignee history
2012–2015Patents assigned to ABARE AMBER CHRISTINE (2)· patent assignee history
2014–2015Patents assigned to EDMOND JOHN ADAM (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 29 | 2001–2017 |
| DOVERSPIKE KATHLEEN MARIEself | 4 | 2012–2015 |
| BERGMANN MICHAEL JOHN | 3 | 2012–2015 |
| ABARE AMBER CHRISTINE | 2 | 2012–2015 |
| EDMOND JOHN ADAM | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cary, NC, US | 16 | 2001–2017 |
| Apex, NC, US | 13 | 2004–2015 |
| Alexandria, Virginia, US | 1 | 1997 |