Inventor
Kun-Yuan Liao
Inventor
Hsinchu, TW
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices28%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10BElectronic memory devices2%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
10,916,694Magnetoresistive random access memory (MRAM) device202110,854,520Method for forming semiconductor structure202010,332,978Device with reinforced metal gate spacer and method of fabricating201910,199,374Semiconductor device and fabrication method thereof201910,192,825Semiconductor device201910,109,525Fabrication method and structure of semiconductor device with contact and plug201810,103,250Method of fabricating semiconductor device201810,062,584Method for forming semiconductor structure20189,985,123Method for fabricating a semiconductor device having gate structure with doped hard mask20189,865,593'Semiconductor device and fabrication method thereof'20189,799,550'Manufacturing method for forming a semiconductor structure'20179,793,382'Manufacturing method of semiconductor device'20179,780,193'Device with reinforced metal gate spacer and method of fabricating'20179,773,890'Semiconductor device and method of fabricating the same'20179,748,349'Semiconductor device'20179,728,455'Semiconductor device and method for fabricating the same'20179,711,411'Semiconductor device and method for fabricating the same'20179,698,255'Semiconductor device having gate structure with doped hard mask'20179,685,531'Method for manufacturing semiconductor device having metal gate'20179,673,100'Semiconductor device having contact plug in two dielectric layers and two etch stop layers'20179,640,484'Semiconductor device and manufacturing method thereof'20179,583,388'Semiconductor device and method for fabricating the same'20179,543,211'Semiconductor structure and manufacturing method thereof'20179,543,203'Method of fabricating a semiconductor structure with a self-aligned contact'20179,530,851'Semiconductor device and manufacturing methods thereof'20169,490,334'Semiconductor device having metal gate and manufacturing method thereof'20169,455,135'Method for fabricating semiconductor device'20169,337,084'Method for manufacturing contact holes of a semiconductor device'20169,324,620'Metal gate structure and method of making the same'20169,263,294'Method of forming semiconductor device'20169,263,540'Metal gate structure'20169,230,864'Method of forming a semiconductor device having a metal gate'20169,214,392'Method of forming contact hole and semiconductor structure with contact plug'20159,209,273'Method of fabricating metal gate structure'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2021Patents assigned to UNITED MICROELECTRONICS CORP (34)· patent assignee history
2015–2020Based in Hsinchu, TW· patent location history
2021Based in Hisinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 34 | 2015–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 33 | 2015–2020 |
| Hisinchu, TW | 1 | 2021 |