LexDanaLexDanabeta
Inventor

ZHONG ZHANG

Inventor
CN

Overview

74→
Patents
2021–2026
Patent span
Electricity
Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices24%
H01LSemiconductor devices19%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10DInorganic electric semiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G06TImage data processing or generation, in general4%
G06VImage or video recognition or understanding4%
H04MTelephonic communication2%
B24BMachines, devices, or processes for grinding or polishing2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
PatentTitleYear
12,550,329Vertical memory devices202612,543,316Memory device with word lines and contact landing202612,526,999Three-dimensional memory device and fabrication method thereof202612,519,038Semiconductor device including a memory stack and a contact structure in a spacer structure202612,501,614Three-dimensional memory devices with stack structures, and fabricating methods thereof202512,432,921Three-dimensional memory devices and methods for forming the same202512,426,614Lentinula edodes-derived saltiness enhancing peptide, method for preparing the same and use thereof202512,336,181Three-dimensional memory device having source-select-gate cut structures and methods for forming the same202512,315,802Memory device and fabrication method thereof202512,307,026Multi-view fast photographing device for horny jaws of cephalopods202512,302,573Three-dimensional memory device with backside interconnect structures202512,302,558Three-dimensional memory and manufacturing method thereof202512,283,547Contact structures for three-dimensional memory devices and methods for forming the same202512,279,429Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the same202512,232,313Staircase structure in three-dimensional memory device and method for forming the same202512,207,466Method of forming a three-dimensional NAND memory device with reduced RC delay202512,205,895Three-dimensional memory device having staircase structure and method for forming the same202512,167,605Vertical memory devices202412,151,451Composite plate, composite plate roughening device, and method for manufacturing composite plate202412,136,586Semiconductor devices having a conductive layer stacking with an insulating layer and a spacer structure through the conductive layer202412,132,847Composite plate, composite plate roughening device, and method for manufacturing composite plate202412,096,631Three-dimensional NAND memory device and method of forming the same202412,094,767Barrier layers for word line contacts in a three-dimensional NAND memory and fabrication methods thereof202412,083,567Method for making a metal material composite202412,088,747Method for making a metal material composite202412,082,411Three-dimensional memory device with backside interconnect structures202412,068,2503D NAND memory device and method of forming the same202412,063,780Memory cell structure of a three-dimensional memory device202412,057,372Methods for forming contact structures and semiconductor devices including forming a spacer structure into a base structure202412,058,865Three-dimensional memory devices with support structures and methods for forming the same202412,052,870Staircase structure with multiple divisions for three-dimensional memory202412,048,149Three-dimensional memory device having source-select-gate cut structures and methods for forming the same202412,046,5553D NAND memory device and method of forming the same202412,033,9443D NAND memory device and method of forming the same202412,035,525Three-dimensional NAND memory device and method of forming the same202412,033,957Three-dimensional memory devices and methods for forming the same202412,008,794Systems and methods for intelligent video surveillance202412,002,757Staircase structure in three-dimensional memory device and method for forming the same202411,980,030Three-dimensional memory device and fabrication method thereof202411,974,431Three-dimensional memory devices and fabricating methods thereof202411,907,437Terminal control system and method, and terminal device202411,901,313Methods for forming three-dimensional memory devices with supporting structure for staircase region202411,871,573Three-dimensional memory device having source-select-gate cut structures and methods for forming the same202411,862,565Contact structures for three-dimensional memory202411,864,388Vertical memory devices202411,849,575Concentric staircase structure in three-dimensional memory device and method for forming the same202311,842,542System and method for abnormal scene detection202311,837,541Memory device and fabrication method thereof202311,812,614Vertical memory devices202311,783,635Systems and methods for detecting a posture of a human object202311,749,737Memory device with bottom-select-gate structure and method for forming the same202311,704,936Object tracking and best shot detection system202311,699,659Staircase structure in three-dimensional memory device and method for forming the same202311,699,732Method for forming memory device comprising bottom-select-gate structure202311,696,439Staircase structure in three-dimensional memory device and method for forming the same202311,689,697System and method for traffic surveillance202311,670,592Staircase structure in three-dimensional memory device and method for forming the same202311,665,892Staircase structure in three-dimensional memory device and method for forming the same202311,647,632Three-dimensional memory devices with supporting structure for staircase region202311,607,124System and method for measuring pupillary distance202311,594,030Systems and methods for monitoring traffic sign violation202311,587,945Three-dimensional NAND memory device with reduced RC delay202311,562,945Semiconductor device having a spacer structure in a conductive layer and a contact structure in the spacer structure202311,468,598System and method for camera calibration202211,462,558Staircase structure with multiple divisions for three-dimensional memory202211,403,899Smart door system202211,380,629Methods for forming three-dimensional memory devices with supporting structure for staircase region202211,342,2643D NAND memory device and method of forming the same202211,297,708System and method for lighting control202211,288,495Object tracking and best shot detection system202211,239,247Memory device and method for forming the same202211,233,007Staircase structure in three-dimensional memory device and method for forming the same202211,183,575Memory device and method for forming the same202111,153,041Packet transmission method and user equipment2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (55)· patent assignee history
2021Patents assigned to HUAWEI TECH CO LTD (1)· patent assignee history
2021–2026Based in CN· patent location history
2022–2024Patents assigned to SHANGHAI TRUTHVISION INFORMATION TECH CO LTD (9)· patent assignee history
2022–2023Patents assigned to AVIGILON FORTRESS CORP (2)· patent assignee history
2022–2024Based in US· patent location history
2024Patents assigned to JIANGSU KANGRUI NEW MATERIAL TECH CO LTD (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
YANGTZE MEMORY TECH CO LTD552021–2026
SHANGHAI TRUTHVISION INFORMATION TECH CO LTD92022–2024
JIANGSU KANGRUI NEW MATERIAL TECH CO LTD42024
AVIGILON FORTRESS CORP22022–2023
HUAWEI TECH CO LTD12021
Locations
LocationPatentsSpan
CN632021–2026
US112022–2024