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Inventor

Takafumi Noda

Inventor
Nagano, JP

Overview

43→
Patents
2002–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 43 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G01Jprimary
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light26%
H10BElectronic memory devices16%
H10DInorganic electric semiconductor devices14%
H10NElectric solid-state devices not otherwise provided for11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H01LSemiconductor devices6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G11CStatic stores2%
G01KMeasuring temperature1%
PatentTitleYear
10,608,411Light-emitting device, method for manufacturing same, and projector20209,274,004'Infrared sensor and heat sensing element'20169,182,288'Thermal detector, thermal detection device, and electronic instrument'20159,182,287'Infrared sensor, heat sensing element, and heat sensing method using the same'20159,163,993'Thermal detector, thermal detection device, and electronic instrument'20159,140,610'Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument'20159,006,856'Thermal electromagnetic wave detection element, method for producing thermal electromagnetic wave detection element, thermal electromagnetic wave detection device, and electronic apparatus'20158,916,948'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20148,916,824'Pyroelectric light detector, pyroelectric light detecting device, and electronic device'20148,907,285'Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument'20148,851,748'Thermal detector, thermal detector device, electronic instrument, and method of manufacturing thermal detector'20148,736,010'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20148,710,443'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20148,610,064'Thermal detector, thermal detector device, and electronic instrument'20138,592,937'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20138,581,192'Pyroelectric detector and method for manufacturing same, pyroelectric detection device, and electronic instrument'20138,569,698'Thermal detector, thermal detection device, and electronic instrument'20138,563,933'Thermal detector, thermal detector device, electronic instrument, and method of manufacturing thermal detector'20138,502,150'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20138,362,584'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20138,362,583'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20138,258,597'Pyroelectric detector, pyroelectric detection device, and electronic instrument'20128,039,884'Semiconductor device having a contact hole with a curved cross-section and its manufacturing method'20117,989,862'Semiconductor device and its manufacturing method'20117,825,027'Method for manufacturing memory device'20107,812,385'Ferroelectric capacitor device and method with optimum hysteresis characteristics'20107,592,684'Semiconductor device and method for manufacturing the same'20097,507,622'Semiconductor device and manufacturing method thereof'20097,163,855'Method for manufacturing semiconductor devices'20077,141,862'Semiconductor device and method for manufacturing the same'20067,008,850'Method for manufacturing a semiconductor device'20067,001,812'Method of manufacturing semi conductor device'20066,713,886'Semiconductor device'20046,657,243'Semiconductor device with SRAM section including a plurality of memory cells'20036,620,637'Semiconductor analysis apparatus, semiconductor analysis method and method for manufacturing semiconductor device'20036,570,264'Semiconductor memory device'20036,538,338'Static RAM semiconductor memory device having reduced memory'20036,507,124'Semiconductor memory device'20036,469,400'Semiconductor memory device'20026,469,356'Semiconductor memory device having different distances between gate electrode layers'20026,455,899'Semiconductor memory device having improved pattern of layers and compact dimensions'20026,407,463'Semiconductor memory device having gate electrode, drain-drain contact, and drain-gate contact layers'20026,347,048'Semiconductor memory device'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Patents assigned to SEIKO EPSON CORP (43)· patent assignee history
2002–2004Based in Sakata, JP· patent location history
2003Based in Suwa, JP· patent location history
2006–2009Based in Shiojiri, JP· patent location history
2010–2020Based in Matsumoto, JP· patent location history
2012–2015Patents assigned to NODA TAKAFUMI (15)· patent assignee history
2012–2015Patents assigned to TAKIZAWA JUN (5)· patent assignee history
2012–2015Based in Nagano, JP· patent location history
2013Patents assigned to KAMIKAWA TAKETOMI (1)· patent assignee history
2020Patents assigned to SOPHIA SCHOOL CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEIKO EPSON CORP432002–2020
NODA TAKAFUMIself152012–2015
TAKIZAWA JUN52012–2015
KAMIKAWA TAKETOMI12013
SOPHIA SCHOOL CORP12020
Locations
LocationPatentsSpan
Nagano, JP192012–2015
Sakata, JP92002–2004
Matsumoto, JP72010–2020
Shiojiri, JP62006–2009
Suwa, JP22003