Inventor
James R. Grandusky
Inventor
Waterford, NY, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers41%
H01LSemiconductor devices39%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
C30BSingle-crystal growth4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
PatentTitleYear
10,971,665Photon extraction from nitride ultraviolet light-emitting devices202110,854,797Photon extraction from ultraviolet light-emitting devices202010,756,234Aluminum nitride substrate removal for ultraviolet light-emitting devices202010,700,237Ultraviolet light-emitting devices incorporating graded layers and compositional offsets202010,612,156Two-stage seeded growth of large aluminum nitride single crystals202010,615,322Photon extraction from nitride ultraviolet light-emitting devices202010,446,391Thick pseudomorphic nitride epitaxial layers201910,407,798Two-stage seeded growth of large aluminum nitride single crystals201910,347,805Photon extraction from ultraviolet light-emitting devices201910,211,368Ultraviolet light-emitting devices incorporating graded layers and compositional offsets201910,211,369Ultraviolet light-emitting devices incorporating two-dimensional hole gases201910,074,784Photon extraction from nitride ultraviolet light-emitting devices20189,935,247Photon extraction from ultraviolet light-emitting devices20189,806,227'Ultraviolet light-emitting devices incorporating graded layers and compositional offsets'20179,680,057'Ultraviolet light-emitting devices incorporating two-dimensional hole gases'20179,620,676'Pseudomorphic electronic and optoelectronic devices having planar contacts'20179,437,430'Thick pseudomorphic nitride epitaxial layers'20169,299,880'Pseudomorphic electronic and optoelectronic devices having planar contacts'20168,962,359'Photon extraction from nitride ultraviolet light-emitting devices'20158,080,833'Thick pseudomorphic nitride epitaxial layers'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2021Patents assigned to GRANDUSKY JAMES R (20)· patent assignee history
2011–2021Patents assigned to SCHOWALTER LEO J (20)· patent assignee history
2011–2021Patents assigned to CRYSTAL IS INC (19)· patent assignee history
2011–2020Patents assigned to GIBB SHAWN R (9)· patent assignee history
2011–2021Based in Waterford, NY, US· patent location history
2015–2021Patents assigned to CHEN JIANFENG (7)· patent assignee history
2016Based in Albany, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GRANDUSKY JAMES Rself | 20 | 2011–2021 |
| SCHOWALTER LEO J | 20 | 2011–2021 |
| CRYSTAL IS INC | 19 | 2011–2021 |
| GIBB SHAWN R | 9 | 2011–2020 |
| CHEN JIANFENG | 7 | 2015–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Waterford, New York, US | 19 | 2011–2021 |
| Albany, New York, US | 1 | 2016 |