Inventor
Jung-Gun You
Inventor
Ansan-si, KR
Overview
Patents· 42 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices38%
H10DInorganic electric semiconductor devices38%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10BElectronic memory devices4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
B82YSpecific uses or applications of nanostructures1%
PatentTitleYear
10,868,007Semiconductor device202010,727,354Semiconductor device having vertical channel and method of manufacturing the same202010,707,348Fin field effect transistors having liners between device isolation layers and active areas of the device202010,692,864Semiconductor device having asymmetric fin-shaped pattern202010,629,729Vertical field effect transistor and semiconductor device including the same202010,629,742Semiconductor device and method of fabricating the same202010,629,597Semiconductor device202010,522,539Semiconductor devices and fabricating methods thereof201910,497,804Vertical semiconductor device201910,483,399Integrated circuit device201910,475,707Semiconductor device and method of fabricating the same201910,461,189Fin field effect transistors having liners between device isolation layers and active areas of the device201910,276,570Semiconductor device201910,211,204Semiconductor devices and fabricating methods thereof201910,199,377Semiconductor device having asymmetric fin-shaped pattern201910,192,968Semiconductor devices having gate structures with skirt regions201910,170,366Semiconductor device having dummy gates and method of fabricating the same201910,157,917Semiconductor device201810,103,142Integrated circuit (IC) devices including stress inducing layers201810,096,714Integrated circuit device and method of manufacturing the same201810,083,965Semiconductor device having fin-type patterns201810,074,726Fin semiconductor device including dummy gate on isolation layer201810,038,093FIN field effect transistors having liners between device isolation layers and active areas of the device20189,991,264Integrated circuit device and method of manufacturing the same20189,941,281Semiconductor device20189,935,017Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation20189,899,388'Integrated circuit device and method of manufacturing the same'20189,887,194'Semiconductor devices and methods of fabricating the same'20189,871,042'Semiconductor device having fin-type patterns'20189,865,736'Semiconductor devices and methods of manufacturing the same'20189,865,495'Semiconductor device and method for fabricating the same'20189,859,398'Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized portions of the fin-shaped patterns'20189,853,029Integrated circuit device and method of manufacturing the same20179,768,169'Semiconductor devices and fabricating methods thereof'20179,721,950'Semiconductor device'20179,711,504'Semiconductor device'20179,679,978'Semiconductor device and method for fabricating the same'20179,659,827'Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separation'20179,620,406'Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patterns'20179,601,628'Semiconductor device having asymmetric fin-shaped pattern'20179,553,089'Semiconductor device'20179,536,825'Semiconductor device and method for fabricating the same'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (42)· patent assignee history
2017Patents assigned to YOU JUNG-GUN (3)· patent assignee history
2017–2020Based in Ansan-si, KR· patent location history
2017Based in Anyang-si, KR· patent location history
2017Based in Suwon-si, KR· patent location history
2018–2019Patents assigned to YOU JUNG GUN (4)· patent assignee history
2018–2019Patents assigned to HA JI YONG (2)· patent assignee history
2018Patents assigned to PARK GI GWAN (2)· patent assignee history
2018–2020Based in Hwaseong-si, KR· patent location history
2018Based in Asan-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 42 | 2017–2020 |
| YOU JUNG GUNself | 4 | 2018–2019 |
| YOU JUNG-GUNself | 3 | 2017 |
| HA JI YONG | 2 | 2018–2019 |
| PARK GI GWAN | 2 | 2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Ansan-si, KR | 36 | 2017–2020 |
| Hwaseong-si, KR | 3 | 2018–2020 |
| Asan-si, KR | 1 | 2018 |
| Anyang-si, KR | 1 | 2017 |
| Suwon-si, KR | 1 | 2017 |