Inventor
TIEN-LU LIN
Inventor
TW
Overview
Patents· 45 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1029%
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
PatentTitleYear
12,575,403Interconnect structure202612,464,764Low parasitic capacitance contact structure202512,463,095Semiconductor structure with a laminated layer202512,446,275Semiconductor device and manufacturing method thereof202512,432,994Source/drain metal contact and formation thereof202512,389,665Semiconductor device structure202512,382,709Semiconductor device structure and method for forming the same202512,266,566Contact resistance between via and conductive line202512,183,784Semiconductor device with air gap on gate structure and method for forming the same202412,159,922Method of fabricating semiconductor device202412,131,942Source/drain isolation structure and methods thereof202412,125,912Semiconductor device structure and method for forming the same preliminary class202412,087,860Methods of forming contact features in field-effect transistors202412,057,398Semiconductor device with multi-layer dielectric and methods of forming the same202412,051,646Metal line structure and method202412,040,273Semiconductor device with multi-layer dielectric202412,009,254Contact resistance between via and conductive line202412,009,265Slot contacts and method forming same202412,002,756Butted contacts and methods of fabricating the same in semiconductor devices202411,978,669Semiconductor structure with a laminated layer202411,908,744Semiconductor device structure202411,901,238Semiconductor device structure202411,855,144Source/drain metal contact and formation thereof202311,842,962Interconnect structure with air-gaps202311,715,761Semiconductor device with air gap on gate structure and method for forming the same202311,694,921Source/drain isolation structure and methods thereof202311,658,244Semiconductor device structure202311,637,186Field effect transistor having gate contact and source/drain contact separated by a gap202311,637,064Advanced metal connection with metal cut202311,631,749Method of fabricating semiconductor device202311,605,736Low-capacitance structures and processes202311,581,403Semiconductor device and manufacturing method thereof202311,532,518Slot contacts and method forming same202211,508,622Semiconductor device structure with tapered contact and method for forming the same202211,495,539Interconnect structure with air-gaps202211,476,196Semiconductor device with multi-layer dielectric202211,342,229Method for forming a semiconductor device structure having an electrical connection structure202211,335,592Contact resistance between via and conductive line202211,282,920Semiconductor device with air gap on gate structure and method for forming the same202211,264,284Semiconductor device and method of fabricating the same202211,244,899Butted contacts and methods of fabricating the same in semiconductor devices202211,239,106Source/drain isolation structure and methods thereof202211,239,340Semiconductor arrangement and formation thereof202211,217,480Semiconductor structure with a laminated layer202211,189,531Fin field-effect transistor device and method2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (44)· patent assignee history
2021–2026Based in TW· patent location history
2026Patents assigned to POWERCHIP SEMICONDUCTOR MFG CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 44 | 2021–2025 |
| POWERCHIP SEMICONDUCTOR MFG CORP | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 45 | 2021–2026 |