Inventor
Dhanyakumar Mahaveer Sathaiya
Inventor
Hsinchu, TW
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices33%
H10DInorganic electric semiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
PatentTitleYear
10,985,246MOSFET with selective dopant deactivation underneath gate202110,157,985MOSFET with selective dopant deactivation underneath gate20189,263,345'SOI transistors with improved source/drain structures with enhanced strain'20169,153,662'MOSFET with selective dopant deactivation underneath gate'20158,993,424'Method for forming a semiconductor transistor device with optimized dopant profile'2015Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (4)· patent assignee history
2015–2016Patents assigned to GOTO KEN-ICHI (3)· patent assignee history
2015–2016Patents assigned to SATHAIYA DHANYAKUMAR MAHAVEER (3)· patent assignee history
2015–2016Patents assigned to SHEN TZER-MIN (2)· patent assignee history
2015Patents assigned to WU ZHIQIANG (2)· patent assignee history
2015–2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 4 | 2015–2021 |
| GOTO KEN-ICHI | 3 | 2015–2016 |
| SATHAIYA DHANYAKUMAR MAHAVEERself | 3 | 2015–2016 |
| SHEN TZER-MIN | 2 | 2015–2016 |
| WU ZHIQIANG | 2 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 5 | 2015–2021 |