Inventor
Shang-Yuan Tsai
Inventor
Kaohsiung, TW
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H01LSemiconductor devices23%
H10DInorganic electric semiconductor devices23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10BElectronic memory devices5%
PatentTitleYear
9,799,550'Manufacturing method for forming a semiconductor structure'20179,337,084'Method for manufacturing contact holes of a semiconductor device'20169,196,524'Manufacturing method of semiconductor device'20159,023,708'Method of forming semiconductor device'20158,835,324'Method for forming contact holes'20148,691,659'Method for forming void-free dielectric layer'20148,592,321'Method for fabricating an aperture'20138,574,990'Method of manufacturing semiconductor device having metal gate'20138,252,650'Method for fabricating CMOS transistor'2012Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2012–2017Patents assigned to UNITED MICROELECTRONICS CORP (9)· patent assignee history
2012–2015Patents assigned to TSAI SHANG-YUAN (6)· patent assignee history
2012–2015Patents assigned to LIAO JIUNN-HSIUNG (5)· patent assignee history
2012–2015Patents assigned to LIN YI-PO (5)· patent assignee history
2012–2015Patents assigned to CHANG FENG-YI (4)· patent assignee history
2012–2017Based in Kaohsiung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 9 | 2012–2017 |
| TSAI SHANG-YUANself | 6 | 2012–2015 |
| LIAO JIUNN-HSIUNG | 5 | 2012–2015 |
| LIN YI-PO | 5 | 2012–2015 |
| CHANG FENG-YI | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kaohsiung, TW | 9 | 2012–2017 |