Inventor

Wenmei Li

Inventor
Sunnyvale, CA, US

Overview

27→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 27 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices35%
H10DInorganic electric semiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C07KPeptides2%
C12QMeasuring or testing processes involving enzymes, nucleic acids or microorganisms2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
G02BOptical elements, systems or apparatus2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
H01LSemiconductor devices2%
PatentTitleYear
11,063,840Methods and systems for predicting successful data transmission during mass communications across computer networks featuring disparate entities and imbalanced data sets using machine learning models202110,516,044Contacts for semiconductor devices201910,073,100Methods and compositions for the diagnosis and treatment of cancer20188,742,496'Sonos memory cells having non-uniform tunnel oxide and methods for fabricating same'20148,637,918'Method and device employing polysilicon scaling'20148,614,475'Void free interlayer dielectric'20138,564,041'Contacts for semiconductor devices'20138,487,373'SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same'20138,441,041'Memory device peripheral interconnects'20138,367,493'Void free interlayer dielectric'20138,076,199'Method and device employing polysilicon scaling'20118,022,468'Ultraviolet radiation blocking interlayer dielectric'20117,977,797'Integrated circuit with contact region and multiple etch stop insulation layer'20117,977,218'Thin oxide dummy tiling as charge protection'20117,951,704'Memory device peripheral interconnects and method of manufacturing'20117,927,723'Film stacks to prevent UV-induced device damage'20117,704,878'Contact spacer formation using atomic layer deposition'20107,572,727'Semiconductor formation method that utilizes multiple etch stop layers'20097,361,587'Semiconductor contact and nitride spacer formation system and method'20087,300,886'Interlayer dielectric for charge loss improvement'20077,238,571'Non-volatile memory device with increased reliability'20077,015,135'Method and system for reducing contact defects using non conventional contact formation method for semiconductor cells'20066,992,370'Memory cell structure having nitride layer with reduced charge loss and method for fabricating same'20066,974,995'Method and system for forming dual gate structures in a nonvolatile memory using a protective layer'20056,867,063'Organic spin-on anti-reflective coating over inorganic anti-reflective coating'20056,808,992'Method and system for tailoring core and periphery cells in a nonvolatile memory'20046,613,657'BPSG, SA-CVD liner/P-HDP gap fill'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2013Patents assigned to ADVANCED MICRO DEVICES INC (10)· patent assignee history
2003–2019Based in Sunnyvale, CA, US· patent location history
2004–2014Patents assigned to SPANSION LLC (19)· patent assignee history
2011–2014Patents assigned to LI WENMEI (6)· patent assignee history
2011–2014Patents assigned to FANG SHENQING (4)· patent assignee history
2011–2014Patents assigned to KANG INKUK (3)· patent assignee history
2011–2014Based in San Jose, CA, US· patent location history
2018Based in Beijing, CN· patent location history
2021Based in New York, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SPANSION LLC192004–2014
ADVANCED MICRO DEVICES INC102003–2013
LI WENMEIself62011–2014
FANG SHENQING42011–2014
KANG INKUK32011–2014
Locations
LocationPatentsSpan
Sunnyvale, California, US182003–2019
San Jose, California, US72011–2014
New York, New York, US12021
Beijing, CN12018