Inventor
Michinori Wachi
Inventor
Hitachi, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth50%
Y10TTechnical subjects covered by former us classification30%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
PatentTitleYear
7,318,916'Semiconductive GaAs wafer and method of making the same'20087,314,518'Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace'20087,214,269'Si-doped GaAs single crystal substrate'20076,409,831'Apparatus for fabricating single crystal'20026,290,773'Method and apparatus for fabricating single crystal'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2008Patents assigned to HITACHI CABLE (5)· patent assignee history
2001–2008Based in Hitachi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI CABLE | 5 | 2001–2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hitachi, JP | 5 | 2001–2008 |