Inventor

Sik Lui

Inventor

Sunnyvale, CA, US

Overview

1993–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 130 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices38%

H01LSemiconductor devices20%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%

H03KPulse technique5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%

G11CStatic stores2%

G01RMeasuring electric variables1%

H01GCapacitors1%

PatentTitleYear

10,896,968Device structure and manufacturing method using HDP deposited source-body implant block2021 10,714,580Source ballasting for p-channel trench MOSFET2020 10,686,056Process method and structure for high voltage MOSFETs2020 10,644,118Self-aligned contact for trench power MOSFET2020 10,553,714Method for fabricating a folded channel trench MOSFET2020 10,446,545Bidirectional switch having back to back field effect transistors2019 10,418,899MOSFET switch circuit for slow switching application2019 10,388,781Device structure having inter-digitated back to back MOSFETs2019 10,325,908Compact source ballast trench MOSFET and method of manufacturing2019 10,263,070Method of manufacturing LV/MV super junction trench power MOSFETs2019 10,256,236Forming switch circuit with controllable phase node ringing2019 10,211,333Scalable SGT structure with improved FOM2019 10,199,492Folded channel trench MOSFET2019 10,103,140Switch circuit with controllable phase node ringing2018 10,062,685Variable snubber for MOSFET application2018 10,056,461Composite masking self-aligned trench MOSFET2018 10,032,584Robust semiconductor power devices with design to protect transistor cells with slower switching speed2018 9,911,840'Self aligned trench MOSFET with integrated diode'2018 9,876,096Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs2018 9,818,829'Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs'2017 9,806,175'Power MOSFET device structure for high frequency applications'2017 9,793,153'Low cost and mask reduction method for high voltage devices'2017 9,755,052'Process method and structure for high voltage MOSFETS'2017 9,741,851'Trench junction barrier controlled Schottky'2017 9,716,156'Device structure and manufacturing method using HDP deposited source-body implant block'2017 9,691,863'Self-aligned contact for trench power MOSFET'2017 9,685,523'Diode structures with controlled injection efficiency for fast switching'2017 9,685,435'Integrated snubber in a single poly MOSFET'2017 9,595,587'Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs'2017 9,502,554'High frequency switching MOSFETs with low output capacitance using a depletable P-shield'2016 9,484,453'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'2016 9,484,452'Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs'2016 9,450,088'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'2016 9,443,928'Oxide terminated trench MOSFET with three or four masks'2016 9,324,858'Trench-gated MIS devices'2016 9,269,805'Method to manufacture short channel trench MOSFET'2016 9,252,264'High frequency switching MOSFETs with low output capacitance using a depletable P-shield'2016 9,246,347'Battery charging circuit with serial connection of MOSFET and an enhancement mode JFET configured as reverse blocking diode with low forward voltage drop'2016 9,230,957'Integrated snubber in a single poly MOSFET'2016 9,219,003'Oxide terminated trench MOSFET with three or four masks'2015 9,214,545'Dual gate oxide trench MOSFET with channel stop trench'2015 9,190,512'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'2015 9,171,917'Edge termination configurations for high voltage semiconductor power devices'2015 9,136,060'Precision high-frequency capacitor formed on semiconductor substrate'2015 9,136,370'Shielded gate trench MOSFET package'2015 9,136,380'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'2015 9,123,805'Method to manufacture short channel trench MOSFET'2015 9,024,378'Device structure and manufacturing method using HDP deposited source-body implant block'2015 9,013,848'Active clamp protection circuit for power semiconductor device for high frequency switching'2015 8,980,716'Self aligned trench MOSFET with integrated diode'2015 8,963,233'Power MOSFET device structure for high frequency applications'2015 8,963,240'Shielded gate trench (SGT) mosfet devices and manufacturing processes'2015 8,956,940'Oxide terminated trench MOSFET with three or four masks'2015 8,951,867'High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices'2015 8,946,816'High frequency switching MOSFETs with low output capacitance using a depletable P-shield'2015 8,946,942'Robust semiconductor power devices with design to protect transistor cells with slower switching speed'2015 8,933,506'Diode structures with controlled injection efficiency for fast switching'2015 8,907,416'Dual gate oxide trench MOSFET with channel stop trench'2014 8,896,131'Cascode scheme for improved device switching behavior'2014 8,828,857'Approach to integrate Schottky in MOSFET'2014 8,829,603'Shielded gate trench MOSFET package'2014 8,809,948'Device structure and methods of making high density MOSFETs for load switch and DC-DC applications'2014 8,759,908'Two-dimensional shielded gate transistor device and method of manufacture'2014 8,753,935'High frequency switching MOSFETs with low output capacitance using a depletable P-shield'2014 8,669,613'Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method'2014 8,643,135'Edge termination configurations for high voltage semiconductor power devices'2014 8,637,926'Oxide terminated trench MOSFET with three or four masks'2014 8,597,998'Power MOS device fabrication'2013 8,580,667'Self aligned trench MOSFET with integrated diode'2013 8,445,370'Trench junction barrier controlled Schottky'2013 8,431,989'Shielded gate trench (SGT) MOSFET devices and manufacturing processes'2013 8,431,470'Approach to integrate Schottky in MOSFET'2013 8,394,702'Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process'2013 8,372,708'Device structure and manufacturing method using HDP deposited using deposited source-body implant block'2013 8,367,501'Oxide terminated trench MOSFET with three or four masks'2013 8,357,973'Inverted-trench grounded-source FET structure with trenched source body short electrode'2013 8,324,711'Precision high-frequency capacitor formed on semiconductor substrate'2012 8,324,683'Oxide terminated trench MOSFET with three or four masks'2012 8,288,229'Power MOS device fabrication'2012 8,174,283'Calibration technique for measuring gate resistance of power MOS gate device at wafer level'2012 8,169,062'Integrated circuit package for semiconductior devices with improved electric resistance and inductance'2012 8,163,618'Power MOSFET device structure for high frequency applications'2012 8,119,482'MOSFET using gate work function engineering for switching applications'2012 8,067,822'Integrated circuit package for semiconductor devices with improved electric resistance and inductance'2011 8,035,159'Device structure and manufacturing method using HDP deposited source-body implant block'2011 8,008,716'Inverted-trench grounded-source FET structure with trenched source body short electrode'2011 8,004,063'Precision high-frequency capacitor formed on semiconductor substrate'2011 7,960,233'MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification'2011 7,936,011'Shielded gate trench (SGT) MOSFET devices and manufacturing processes'2011 7,923,774'Power MOS device with conductive contact layer'2011 7,868,381'Structures of and methods of fabricating trench-gated MIS devices'2011 7,863,675'MOSFET using gate work function engineering for switching applications'2011 7,800,169'Power MOS device'2010 7,786,531'MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification'2010 7,764,105'MOSFET for synchronous rectification'2010 7,755,379'Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests'2010 7,745,878'Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact'2010 7,737,522'Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction'2010 7,671,662'Thermally stable semiconductor power device'2010 7,659,570'Power MOSFET device structure for high frequency applications'2010 7,633,119'Shielded gate trench (SGT) MOSFET devices and manufacturing processes'2009 7,633,140'Inverted J-lead for power devices'2009 7,605,425'Power MOS device'2009 7,535,021'Calibration technique for measuring gate resistance of power MOS gate device at water level'2009 7,453,119'Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact'2008 7,443,225'Thermally stable semiconductor power device'2008 7,436,022'Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout'2008 7,391,100'Integrated circuit package for semiconductor devices having a reduced leadframe pad and an increased bonding area'2008 7,378,884'MOSFET for synchronous rectification'2008 7,355,433'Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests'2008 7,335,946'Structures of and methods of fabricating trench-gated MIS devices'2008 7,285,822'Power MOS device'2007 7,221,195'MOSFET for synchronous rectification'2007 7,208,818'Power semiconductor package'2007 7,183,616'High speed switching MOSFETS using multi-parallel die packages with/without special leadframes'2007 7,151,036'Precision high-frequency capacitor formed on semiconductor substrate'2006 7,122,882'Low cost power MOSFET with current monitoring'2006 7,005,347'Structures of and methods of fabricating trench-gated MIS devices'2006 6,841,852'Integrated circuit package for semiconductor devices with improved electric resistance and inductance'2005 6,838,722'Structures of and methods of fabricating trench-gated MIS devices'2005 6,621,142'Precision high-frequency capacitor formed on semiconductor substrate'2003 6,621,143'Precision high-frequency capacitor on semiconductor substrate'2003 6,538,300'Precision high-frequency capacitor formed on semiconductor substrate'2003 6,509,233'Method of making trench-gated MOSFET having cesium gate oxide layer'2003 5,838,624'Circuits for improving the reliability of antifuses in integrated circuits'1998 5,818,778'Redundancy circuit for programmable integrated circuits'1998 5,680,360'Circuits for improving the reliablity of antifuses in integrated circuits'1997 5,677,888'Redundancy circuit for programmable integrated circuits'1997 5,514,980'High resolution circuit and method for sensing antifuses'1996 5,188,972'Method for making bipolar transistor by self-aligning the emitter to the base contact diffusion'1993

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1993–2021Based in Sunnyvale, CA, US· patent location history

2006–2021Patents assigned to ALPHA & OMEGA SEMICONDUCTOR (104)· patent assignee history

2011–2021Patents assigned to BHALLA ANUP (30)· patent assignee history

2011–2021Patents assigned to LUI SIK K (20)· patent assignee history

2012–2017Patents assigned to LUI SIK (18)· patent assignee history

2012–2017Patents assigned to NG DANIEL (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
ALPHA & OMEGA SEMICONDUCTOR	104	2006–2021
BHALLA ANUP	30	2011–2021
LUI SIK Kself	20	2011–2021
LUI SIKself	18	2012–2017
NG DANIEL	8	2012–2017

Locations

Location	Patents	Span
Sunnyvale, California, US	130	1993–2021