LexDanaLexDanabeta
Inventor

Fu-Chih Yang

Inventor
Fengshan, TW

Overview

94→
Patents
2003–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 94 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H03KPulse technique2%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
H10BElectronic memory devices0%
PatentTitleYear
11,069,805Embedded JFETs for high voltage applications202110,923,467Series resistor over drain region in high voltage device202110,868,134Method of making transistor having metal diffusion barrier202010,867,990Series resistor over drain region in high voltage device202010,868,135High electron mobility transistor structure202010,790,375High electron mobility transistor202010,741,665Method of forming a high electron mobility transistor202010,686,032High voltage resistor with high voltage junction termination202010,522,630High electron mobility transistor structure and method of making the same201910,510,882Embedded JFETs for high voltage applications201910,483,259Series resistor over drain region in high voltage device201910,325,910Semiconductor device containing HEMT and MISFET and method of forming the same201910,283,599High electron mobility transistor structure and method of making the same201910,276,682High electron mobility transistor201910,164,047High electron mobility transistor structure201810,121,890High voltage transistor structure201810,115,813Semiconductor structure and method of forming the same201810,103,223High voltage resistor with pin diode isolation201810,050,117Method of forming a high electron mobility transistor201810,020,361Circuit structure having islands between source and drain and circuit formed20189,985,103Method of forming high electron mobility transistor20189,941,268Series resistor over drain region in high voltage device20189,911,734'Semiconductor device containing HEMT and MISFET and method of forming the same'20189,871,030'Plasma protection diode for a HEMT device'20189,793,385'Insulated gate bipolar transistor structure having low substrate leakage'20179,755,045'Rectifier structures with low leakage'20179,748,372'Semiconductor structure and method of forming the same'20179,728,613'High electron mobility transistor structure'20179,704,968'Method of forming a high electron mobility transistor'20179,680,009'High voltage semiconductor device'20179,673,323'Embedded JFETs for high voltage applications'20179,660,108'Bootstrap MOS for high voltage applications'20179,583,588'Method of making high electron mobility transistor structure'20179,570,598'Method of forming a semiconductor structure'20179,508,807'Method of forming high electron mobility transistor'20169,502,311'Plasma protection diode for a HEMT device'20169,443,969'Transistor having metal diffusion barrier'20169,425,300'Semiconductor structure and method of forming the same'20169,418,901'Semiconductor device containing HEMT and MISFET and method of forming the same'20169,412,835'Rectifier structures with low leakage'20169,391,195'High side gate driver device'20169,385,178'High voltage resistor with PIN diode isolation'20169,385,225'Method of making a circuit structure having islands between source and drain'20169,379,191'High electron mobility transistor including an isolation region'20169,379,188'Insulated gate bipolar transistor structure having low substrate leakage'20169,373,619'High voltage resistor with high voltage junction termination'20169,331,195'Source tip optimization for high voltage transistor devices which includes a P-body extension region'20169,306,012'Strip-ground field plate'20169,299,694'Stacked and tunable power fuse'20169,263,565'Method of forming a semiconductor structure'20169,257,979'Embedded JFETs for high voltage applications'20169,257,533'Method of making an insulated gate bipolar transistor structure'20169,224,829'High electron mobility transistor and method of forming the same'20159,224,827'High voltage resistor'20159,214,547'Insulated gate bipolar transistor structure having low substrate leakage'20159,190,476'High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages'20159,190,535'Bootstrap MOS for high voltage applications'20159,184,259'Semiconductor structure and method of forming the same'20159,184,334'LED structure'20159,165,839'Plasma protection diode for a HEMT device'20159,147,743'High electron mobility transistor structure with improved breakdown voltage performance'20159,111,956'Rectifier structures with low leakage'20159,111,905'High electron mobility transistor and method of forming the same'20159,111,849'High voltage resistor with biased-well'20159,093,494'Guard structure for semiconductor structure and method of forming guard layout pattern for semiconductor layout pattern'20159,035,379'High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages'20159,018,677'Semiconductor structure and method of forming the same'20158,969,913'Insulated gate bipolar transistor structure having low substrate leakage'20158,946,771'Gallium nitride semiconductor devices and method making thereof'20158,946,012'Method of forming a semiconductor structure'20158,921,893'Circuit structure having islands between source and drain'20148,912,573'Semiconductor device containing HEMT and MISFET and method of forming the same'20148,884,308'High electron mobility transistor structure with improved breakdown voltage performance'20148,860,088'Semiconductor structure and method of forming the same'20148,841,703'High electron mobility transistor and method of forming the same'20148,809,899'LED structure'20148,803,232'High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages'20148,786,050'High voltage resistor with biased-well'20148,748,942'High electron mobility transistor and method of forming the same'20148,704,279'Embedded JFETs for high voltage applications'20148,697,505'Method of forming a semiconductor structure'20148,680,535'High electron mobility transistor structure with improved breakdown voltage performance'20148,680,616'High side gate driver device'20148,664,741'High voltage resistor with pin diode isolation'20148,629,513'HV interconnection solution using floating conductors'20148,629,026'Source tip optimization for high voltage transistor devices'20148,624,322'High voltage device with a parallel resistor'20148,624,296'High electron mobility transistor including an embedded flourine region'20148,598,679'Stacked and tunable power fuse'20138,587,018'LED structure having embedded zener diode'20138,587,073'High voltage resistor'20138,575,694'Insulated gate bipolar transistor structure having low substrate leakage'20138,507,920'Semiconductor structure and method of forming the same'20136,602,747'Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (49)· patent assignee history
2003–2021Based in Fengshan, TW· patent location history
2013–2016Patents assigned to YANG FU-CHIH (26)· patent assignee history
2013–2016Patents assigned to TSAI CHUN LIN (15)· patent assignee history
2013–2016Patents assigned to HSU CHUN-WEI (13)· patent assignee history
2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (42)· patent assignee history
2015–2020Based in Kaohsiung, TW· patent location history
2015Based in Fengshang, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG492003–2016
TAIWAN SEMICONDUCTOR MFG CO LTD422015–2021
YANG FU-CHIHself262013–2016
TSAI CHUN LIN152013–2016
HSU CHUN-WEI132013–2016
Locations
LocationPatentsSpan
Fengshan, TW792003–2021
Kaohsiung, TW142015–2020
Fengshang, TW12015