Inventor
Li Hong XIAO
Inventor
CN
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G11CStatic stores10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
PatentTitleYear
12,575,105Multiple-stack three-dimensional memory device and fabrication method thereof202612,262,5393D NAND memory device and method of forming the same202512,219,773Embedded pad structures of three-dimensional memory devices and fabrication methods thereof202512,137,558Staircase structure for memory device202412,010,838Staircase structure for memory device202411,968,832Multiple-stack three-dimensional memory device and fabrication method thereof202411,943,928Method for forming channel hole plug of three-dimensional memory device202411,943,923Three-dimensional memory devices and fabrication methods thereof202411,889,686Vertical memory devices202411,856,776Structure of 3D NAND memory device and method of forming the same202311,849,582Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same202311,844,216Three-dimensional memory devices and fabricating methods thereof202311,825,6563D NAND memory device and method of forming the same202311,800,710Three-dimensional memory devices and fabricating methods thereof202311,758,729Three-dimensional memory device having a shielding layer and method for forming the same202311,758,722Three-dimensional memory device with deposited semiconductor plugs and methods for forming the same202311,758,731Three-dimensional memory device having a shielding layer and method for forming the same202311,706,920Three-dimensional memory devices and fabrication methods thereof202311,665,903Three-dimensional memory devices and fabrication methods thereof202311,605,644Memory stacks having silicon nitride gate-to-gate dielectric layers and methods for forming the same202311,581,332Three-dimensional memory devices and fabrication methods thereof202311,508,745Three-dimensional memory device having a shielding layer and method for forming the same202211,502,102Three-dimensional memory devices and fabrication methods thereof202211,462,565Three-dimensional memory devices and fabrication methods thereof202211,443,807Memory device using comb-like routing structure for reduced metal line loading202211,430,756Bonded semiconductor structures having bonding contacts made of indiffusible conductive materials and methods for forming the same202211,430,8113D NAND memory device with select gate cut202211,424,266Memory stacks having silicon oxynitride gate-to-gate dielectric layers and methods for forming the same202211,404,4413D NAND memory device and method of forming the same202211,380,701Memory device and forming method thereof202211,367,737Multi-stack three-dimensional memory devices and methods for forming the same202211,329,061Method for improving channel hole uniformity of a three-dimensional memory device202211,309,327Method for forming channel hole plug of three-dimensional memory device202211,302,715Three-dimensional memory devices and fabrication methods thereof202211,271,004Memory device and forming method thereof202211,211,393Memory device and forming method thereof202111,183,488Three-dimensional memory devices with stacked device chips using interposers202111,164,633Memory device using comb-like routing structure for reduced metal line loading202111,145,645Multi-stack three-dimensional memory devices202111,145,666Staircase structure for memory device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to YANGTZE MEMORY TECH CO LTD (40)· patent assignee history
2021–2026Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 40 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 40 | 2021–2026 |