Inventor

Tsutomu Yatsuo

Inventor

Hitachi, JP

Overview

41→

Patents

1976–2017

Patent span

Electricity

Primary field (CPC H)

Patents· 41 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices49%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

G02BOptical elements, systems or apparatus4%

H01LSemiconductor devices4%

H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%

H03KPulse technique3%

B60LPropulsion of electrically-propelled vehicles1%

PatentTitleYear

9,806,520'Inrush current limiting circuit'2017 9,490,338'Silicon carbide semiconductor apparatus and method of manufacturing same'2016 8,952,391'Silicon carbide semiconductor device and its manufacturing method'2015 8,835,933'Recessed gate-type silicon carbide field effect transistor and method of producing same'2014 8,003,991'Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof'2011 7,935,628'Silicon carbide semiconductor device and method for producing the same'2011 7,880,173'Semiconductor device and method of manufacturing same'2011 7,811,874'Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device'2010 7,728,336'Silicon carbide semiconductor device and method for producing the same'2010 6,750,477'Static induction transistor'2004 6,566,726'Semiconductor device and power converter using the same'2003 6,384,428'Silicon carbide semiconductor switching device'2002 6,353,236'Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same'2002 6,180,959'Static induction semiconductor device, and driving method and drive circuit thereof'2001 6,169,672'Power converter with clamping circuit'2001 5,831,293'Semiconductor thyristor switching device and power converter using same'1998 5,736,753'Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide'1998 5,324,967'Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same'1994 5,021,855'Gate turn-off thyristor'1991 4,825,270'Gate turn-off thyristor'1989 4,691,223'Semiconductor device having high breakdown voltage'1987 4,682,199'High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer'1987 4,651,189'Semiconductor device provided with electrically floating control electrode'1987 4,646,122'Semiconductor device with floating remote gate turn-off means'1987 4,626,888'Gate turn-off thyristor'1986 4,542,398'Semiconductor devices of multi-emitter type'1985 4,500,903'Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length'1985 4,443,810'Gate turn-off amplified thyristor with non-shorted auxiliary anode'1984 4,404,580'Light activated semiconductor device'1983 4,388,635'High breakdown voltage semiconductor device'1983 4,240,091'Semiconductor controlled rectifier device with small area dV/dt self-protecting means'1980 4,216,487'Bidirectional light-activated thyristor having substrate optical isolation'1980 4,110,781'Bidirectional grooved thyristor fired by activation of the beveled surfaces'1978 4,100,562'Light coupled semiconductor device and method of manufacturing the same'1978 4,028,721'Semiconductor controlled rectifier device'1977 4,016,593'Bidirectional photothyristor device'1977 4,016,592'Light-activated semiconductor-controlled rectifier'1977 3,978,514'Diode-integrated high speed thyristor'1976 3,967,308'Semiconductor controlled rectifier'1976 3,947,864'Diode-integrated thyristor'1976 3,943,550'Light-activated semiconductor-controlled rectifier'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–2004Patents assigned to HITACHI LTD (32)· patent assignee history

1976–2004Based in Hitachi, JP· patent location history

1983–2015Based in Ibaraki, JP· patent location history

2010–2015Patents assigned to NAT INST OF ADVANCED IND SCIEN (6)· patent assignee history

2010–2017Based in Tsukuba, JP· patent location history

2014–2015Patents assigned to FUKUDA KENJI (2)· patent assignee history

2014–2015Patents assigned to OKAMOTO MITSUO (2)· patent assignee history

2016–2017Patents assigned to NAT INST ADVANCED IND SCIENCE & TECH (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	32	1976–2004
NAT INST OF ADVANCED IND SCIEN	6	2010–2015
FUKUDA KENJI	2	2014–2015
NAT INST ADVANCED IND SCIENCE & TECH	2	2016–2017
OKAMOTO MITSUO	2	2014–2015

Locations

Location	Patents	Span
Hitachi, JP	31	1976–2004
Tsukuba, JP	6	2010–2017
Ibaraki, JP	4	1983–2015