Inventor
Masahito Otsuki
Inventor
Nagano, JP
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices66%
H01LSemiconductor devices11%
H03KPulse technique9%
H02HEmergency protective circuit arrangements5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
10,276,666Semiconductor device201910,236,677Semiconductor device20199,905,555'Semiconductor device and semiconductor device manufacturing method'20189,881,916'Semiconductor device'20189,793,392'Semiconductor device'20179,559,171'Semiconductor device'20178,242,556'Vertical and trench type insulated gate MOS semiconductor device'20128,008,734'Power semiconductor device'20117,737,490'Vertical and trench type insulated gate MOS semiconductor device'20107,633,122'Insulated gate semiconductor device and method of manufacturing the same'20097,462,911'Insulated gate semiconductor device'20087,151,297'Insulated gate semiconductor device'20066,737,705'Insulated gate semiconductor device'20046,670,650'Power semiconductor rectifier with ring-shaped trenches'20036,621,120'Semiconductor device'20036,559,023'Method of fabricating a semiconductor device with phosphorous and boron ion implantation, and by annealing to control impurity concentration thereof'20036,501,128'Insulated gate transistor and the method of manufacturing the same'20026,218,888'Insulated gate bipolar transistor device with a current limiting circuit'20015,894,139'Semiconductor device structure for insulated gate bipolar transistor'19995,714,774'Two-gate semiconductor power switching device'19985,705,835'Semiconductor device and method of manufacturing the same'19985,606,183'Double-gated turn-off thyristor'19975,561,313'Protective diode for transistor'19965,561,393'Control device of semiconductor power device'19965,559,347'Insulated gate-type bipolar transistor'19965,559,355'Vertical MOS semiconductor device'19965,530,277'Insulated-gate bipolar transistor'19965,459,339'Double gate semiconductor device and control device thereof'19955,397,905'Power semiconductor device having an insulated gate field effect transistor and a bipolar transistor'19955,378,903'Semiconductor device with low on-voltage and large controllable turn-off current'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2019Patents assigned to FUJI ELECTRIC CO LTD (25)· patent assignee history
1995–2019Based in Matsumoto, JP· patent location history
1995–1998Based in Kawasaki, JP· patent location history
1996Patents assigned to FUJI ELECTRONIC CO LTD (1)· patent assignee history
1996–2008Based in Nagano, JP· patent location history
1998Based in Kanagawa, JP· patent location history
2006–2008Patents assigned to FUJI ELEC DEVICE TECH CO LTD (2)· patent assignee history
2009–2012Patents assigned to OTSUKI MASAHITO (2)· patent assignee history
2009Based in Shinagawa-ku, JP· patent location history
2010Patents assigned to FUJI ELECTRIC SYSTEMS CO LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FUJI ELECTRIC CO LTD | 25 | 1995–2019 |
| FUJI ELEC DEVICE TECH CO LTD | 2 | 2006–2008 |
| OTSUKI MASAHITOself | 2 | 2009–2012 |
| FUJI ELECTRIC SYSTEMS CO LTD | 1 | 2010 |
| FUJI ELECTRONIC CO LTD | 1 | 1996 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagano, JP | 12 | 1996–2008 |
| Matsumoto, JP | 10 | 1995–2019 |
| Kawasaki, JP | 6 | 1995–1998 |
| Shinagawa-ku, JP | 1 | 2009 |
| Kanagawa, JP | 1 | 1998 |