Inventor
Werner Robl
Inventor
Regensburg, DE
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1037%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices12%
H10DInorganic electric semiconductor devices10%
C25DProcesses for the electrolytic or electrophoretic production of coatings4%
H01FMagnets4%
B82YSpecific uses or applications of nanostructures2%
C23CCoating metallic material2%
H05HPlasma technique2%
H05KPrinted circuits2%
PatentTitleYear
10,741,402Electronic device, electronic module and methods for fabricating the same202010,648,096Electrolyte, method of forming a copper layer and method of forming a chip202010,446,469Semiconductor device having a copper element and method of forming a semiconductor device having a copper element201910,332,793Self-organizing barrier layer disposed between a metallization layer and a semiconductor region20199,425,146'Semiconductor structure and method for making same'20169,418,937'Integrated circuit and method of forming an integrated circuit'20168,786,085'Semiconductor structure and method for making same'20148,759,207'Semiconductor structure and method for making same'20148,665,054'Semiconductor component with coreless transformer'20148,338,317'Method for processing a semiconductor wafer or die, and particle deposition device'20128,334,202'Device fabricated using an electroplating process'20128,330,274'Semiconductor structure and method for making same'20128,148,257'Semiconductor structure and method for making same'20128,072,071'Semiconductor device including conductive element'20117,974,120'Spin device'20117,909,978'Method of making an integrated circuit including electrodeposition of metallic chromium'20116,960,306'Low Cu percentages for reducing shorts in AlCu lines'20056,943,114'Integration scheme for metal gap fill, with fixed abrasive CMP'20056,866,943'Bond pad structure comprising tungsten or tungsten compound layer on top of metallization level'20056,794,282'Three layer aluminum deposition process for high aspect ratio CL contacts'20046,734,097'Liner with poor step coverage to improve contact resistance in W contacts'20046,720,212'Method of eliminating back-end rerouting in ball grid array packaging'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2020Patents assigned to INFINEON TECHNOLOGIES AG (19)· patent assignee history
2004–2005Based in Poughkeepsie, NY, US· patent location history
2011–2016Patents assigned to ROBL WERNER (8)· patent assignee history
2011–2012Patents assigned to BEER GOTTFRIED (4)· patent assignee history
2011–2012Patents assigned to POHL JENS (4)· patent assignee history
2011–2012Patents assigned to STEINER RAINER (4)· patent assignee history
2011–2020Based in Regensburg, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AG | 19 | 2004–2020 |
| ROBL WERNERself | 8 | 2011–2016 |
| BEER GOTTFRIED | 4 | 2011–2012 |
| POHL JENS | 4 | 2011–2012 |
| STEINER RAINER | 4 | 2011–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Regensburg, DE | 16 | 2011–2020 |
| Poughkeepsie, New York, US | 6 | 2004–2005 |