Inventor

Won-Taeck Jung

Inventor
Hwaseong-si, KR

Overview

20→
Patents
2014–2021
Patent span
Physics
Primary field (CPC G)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores43%
H10BElectronic memory devices23%
H01LSemiconductor devices16%
G06FElectric digital data processing7%
H10DInorganic electric semiconductor devices5%
H04LTransmission of digital information, e.g. telegraphic communication2%
H04MTelephonic communication2%
H04NPictorial communication, e.g. television2%
PatentTitleYear
10,904,612Method for outputting audio and electronic device for the same202110,839,910Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance202010,803,947Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance202010,770,148Nonvolatile memory device and operating method of the same202010,541,033Non-volatile memory device and memory system including the same and program method thereof202010,497,444Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance201910,403,363Nonvolatile memory and storage device including nonvolatile memory201910,043,580Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance20189,978,454Nonvolatile memory with block word line20189,799,400'Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance'20179,570,176'Nonvolatile memory device, storage device having the same, operating method thereof'20179,552,884'Nonvolatile memory and erasing method thereof'20179,449,699'Nonvolatile memory and erasing method thereof'20169,418,749'Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance'20169,412,456'Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device'20169,281,070'Nonvolatile memory and erasing method thereof'20169,190,151'Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance'20159,147,492'Control method of nonvolatile memory device'20158,908,431'Control method of nonvolatile memory device'20148,902,651'Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (20)· patent assignee history
2014–2015Patents assigned to JUNG WON-TAECK (4)· patent assignee history
2014–2015Patents assigned to NAM SANG-WAN (3)· patent assignee history
2014–2015Patents assigned to SHIM SUNIL (2)· patent assignee history
2014–2020Based in Hwaseong-si, KR· patent location history
2015Patents assigned to HAN JIN-MAN (1)· patent assignee history
2016Based in Seongnam-si, KR· patent location history
2017Based in Suwon-si, KR· patent location history
2018–2021Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD202014–2021
JUNG WON-TAECKself42014–2015
NAM SANG-WAN32014–2015
SHIM SUNIL22014–2015
HAN JIN-MAN12015
Locations
LocationPatentsSpan
Hwaseong-si, KR152014–2020
Seoul, KR32018–2021
Suwon-si, KR12017
Seongnam-si, KR12016