Inventor

William U. Liu

Inventor

Dallas, TX, US

Overview

1992–2001

Patent span

Electricity

Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices50%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests28%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%

B82YSpecific uses or applications of nanostructures6%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%

PatentTitleYear

6,187,641'Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region'2001 6,159,816'Method of fabricating a bipolar transistor'2000 6,124,627'Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region'2000 6,025,615'Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same'2000 5,850,099'Thermally uniform transistor'1998 5,702,958'Method for the fabrication of bipolar transistors'1997 5,684,310'Multiple layer wide bandgap collector structure for bipolar transistors'1997 5,616,950'Thermally uniform transistor'1997 5,571,732'Method for fabricating a bipolar transistor'1996 5,552,617'Bipolar transistor'1996 5,525,817'Bipolar transistor'1996 5,455,440'Method to reduce emitter-base leakage current in bipolar transistors'1995 5,389,554'Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications'1995 5,330,932'Method for fabricating GaInP/GaAs structures'1994 5,298,439'1/f noise reduction in heterojunction bipolar transistors'1994 5,278,083'Method for making reliable connections to small features of integrated circuits'1994 5,270,223'Multiple layer wide bandgap collector structure for bipolar transistors'1993 5,171,697'Method of forming multiple layer collector structure for bipolar transistors'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2001Patents assigned to TEXAS INSTRUMENTS INC (17)· patent assignee history

1992–2000Based in Dallas, TX, US· patent location history

1994–1996Based in Richardson, TX, US· patent location history

1996–2001Based in Plano, TX, US· patent location history

2000Patents assigned to TRIQUINT SEMICONDUCTOR TEXAS I (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TEXAS INSTRUMENTS INC	17	1992–2001
TRIQUINT SEMICONDUCTOR TEXAS I	1	2000

Locations

Location	Patents	Span
Dallas, Texas, US	11	1992–2000
Plano, Texas, US	5	1996–2001
Richardson, Texas, US	2	1994–1996