Inventor
MARTIN CHRISTOPHER HOLLAND
Inventor
BE
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
B82YSpecific uses or applications of nanostructures9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
C30BSingle-crystal growth5%
H10BElectronic memory devices3%
H10KOrganic electric solid-state devices3%
C23CCoating metallic material2%
D01FChemical features in the manufacture of artificial filaments, threads, fibres, bristles or ribbons2%
PatentTitleYear
12,581,924Metal nitride diffusion barrier and methods of formation202612,501,638Semiconductor device having reduced impurity diffusion202512,266,526Formation of single crystal semiconductors using planar vapor liquid solid epitaxy202512,193,318Method of forming semiconductor device having carbon nanotube202512,051,702Crystalline semiconductor layer formed in BEOL processes202412,027,592Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interface202412,015,083Thin-sheet FinFET device202411,967,647Localized heating in laser annealing process202411,949,013Semiconductor device and method202411,908,922Heterogeneous semiconductor device substrates with high quality epitaxy202411,848,385Localized protection layer for laser annealing process202311,830,947Method of manufacturing a semiconductor device and a semiconductor device202311,784,045Formation of single crystal semiconductors using planar vapor liquid solid epitaxy202311,764,289Method of manufacturing a semiconductor device and a semiconductor device202311,721,721Germanium nitride layers on semiconductor structures, and methods for forming the same202311,626,507Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentration202311,616,122Germanium containing nanowires and methods for forming the same202311,587,786Crystalline semiconductor layer formed in BEOL processes202311,374,095GE based semiconductor device and a method for manufacturing the same202211,309,417Method of manufacturing a semiconductor device and a semiconductor device202211,302,820Localized protection layer for laser annealing process202211,271,163Method of forming semiconductor device having carbon nanotube202211,251,042Formation of single crystal semiconductors using planar vapor liquid solid epitaxy202211,239,368Semiconductor device and method202211,158,807Field effect transistor and method of manufacturing the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2021–2024Based in BE· patent location history
2023–2026Based in US· patent location history
2023–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| BE | 10 | 2021–2024 |
| US | 9 | 2023–2026 |
| TW | 6 | 2023–2025 |