Inventor
David Paul Brunco
Inventor
Latham, NY, US
Overview
Patents· 30 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
C23CCoating metallic material2%
B82YSpecific uses or applications of nanostructures1%
G06FElectric digital data processing1%
H10BElectronic memory devices1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
11,081,398Method and structure to provide integrated long channel vertical FinFet device202110,811,422Semiconductor recess to epitaxial regions and related integrated circuit structure202010,727,067Late gate cut using selective conductor deposition202010,497,703Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins201910,403,742Field-effect transistors with fins formed by a damascene-like process201910,347,541Active gate contacts and method of fabrication thereof201910,325,811Field-effect transistors with fins having independently-dimensioned sections201910,325,913Method, apparatus, and system having super steep retrograde well with engineered dopant profiles201910,062,612Method and system for constructing FINFET devices having a super steep retrograde well201810,014,409Method and structure to provide integrated long channel vertical FinFET device201810,002,793Sub-fin doping method20189,953,872Semiconductor structure with self-aligned wells and multiple channel materials20189,929,159'Method, apparatus, and system having super steep retrograde well with silicon and silicon germanium fins'20189,911,740'Method, apparatus, and system having super steep retrograde well with engineered dopant profiles'20189,793,168'Semiconductor structure with self-aligned wells and multiple channel materials'20179,583,557'Integrated circuits including a MIMCAP device and methods of forming the same for long and controllable reliability lifetime'20179,490,123'Methods of forming strained epitaxial semiconductor material(S) above a strain-relaxed buffer layer'20169,299,809'Methods of forming fins for a FinFET device wherein the fins have a high germanium content'20169,257,557'Semiconductor structure with self-aligned wells and multiple channel materials'20169,064,702'Method for manufacturing semiconductor devices'20159,029,217'Band engineered semiconductor device and method for manufacturing thereof'20159,006,705'Device with strained layer for quantum well confinement and method for manufacturing thereof'20158,963,225'Band engineered semiconductor device and method for manufacturing thereof'20158,828,839'Methods for fabricating electrically-isolated finFET semiconductor devices'20148,828,826'Method for manufacturing a transistor device comprising a germanium based channel layer'20148,354,344'Methods for forming metal-germanide layers and devices obtained thereby'20138,211,812'Method for fabricating a high-K dielectric layer'20128,207,030'Method for producing nMOS and pMOS devices in CMOS processing'20127,517,765'Method for forming germanides and devices obtained thereof'20096,869,892'Method of oxidizing work pieces and oxidation system'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005Based in San Jose, CA, US· patent location history
2009–2016Based in Tervuren, BE· patent location history
2012–2015Patents assigned to IMEC (8)· patent assignee history
2012–2013Patents assigned to BRUNCO DAVID (2)· patent assignee history
2012Patents assigned to BRUNCO DAVID PAUL (1)· patent assignee history
2012Patents assigned to DE GENDT STEFAN (1)· patent assignee history
2012–2015Based in Hillsboro, OR, US· patent location history
2014–2020Patents assigned to GLOBALFOUNDRIES INC (24)· patent assignee history
2016–2021Based in Latham, NY, US· patent location history
2018Based in Malta, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 24 | 2014–2020 |
| IMEC | 8 | 2012–2015 |
| BRUNCO DAVIDself | 2 | 2012–2013 |
| BRUNCO DAVID PAULself | 1 | 2012 |
| DE GENDT STEFAN | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Latham, New York, US | 17 | 2016–2021 |
| Tervuren, BE | 6 | 2009–2016 |
| Hillsboro, OR, US | 5 | 2012–2015 |
| Malta, New York, US | 1 | 2018 |
| San Jose, California, US | 1 | 2005 |