Inventor
Chang-Min Jeon
Inventor
Yongin-si, KR
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores50%
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices25%
PatentTitleYear
9,275,746'Source line floating circuits, memory devices including the same and methods of reading data in a memory device'20169,007,833'2-transistor flash memory and programming method of 2-transistor flash memory'20157,696,561'Non-volatile memory device, method of manufacturing the same and method of operating the same'20107,697,336'Non-volatile memory device and method of operating the same'20107,512,003'Non-volatile memory device'20096,762,083'Method for manufacturing heterojunction field effect transistor device'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2010Based in Seoul, KR· patent location history
2009–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (5)· patent assignee history
2010–2016Based in Yongin-si, KR· patent location history
2015Patents assigned to JEON CHANG MIN (1)· patent assignee history
2015Patents assigned to KIM BYOUNGHO (1)· patent assignee history
2015Patents assigned to PARK WEONHO (1)· patent assignee history
2016Patents assigned to JEON CHANG-MIN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 5 | 2009–2016 |
| JEON CHANG MINself | 1 | 2015 |
| JEON CHANG-MINself | 1 | 2016 |
| KIM BYOUNGHO | 1 | 2015 |
| PARK WEONHO | 1 | 2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 3 | 2010–2016 |
| Seoul, KR | 3 | 2004–2010 |