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Inventor

Ping Xu

Inventor
Fremont, CA, US

Overview

58→
Patents
1997–2020
Patent span
Chemistry
Primary field (CPC C)

Patents· 58 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds6%
C08JWorking-up6%
B29CShaping or joining of plastics6%
B29KIndexing scheme associated with subclasses b29b, b29c or b29d, relating to moulding materials or to materials for moulds, reinforcements, fillers or preformed parts, e.g. inserts5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B01DSeparation4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
10,711,287D-lactate dehydrogenase, engineered strain containing D-lactate dehydrogenase and construction method and use of engineered strain202010,155,802Locally-active anticoagulants and anti-inflammatory agents20189,322,049'Activation and activators of SirT6'20169,274,274'On-chip path-entangled photonic sources based on periodical poling and waveguide circuits in ferroelectric crystals'20169,221,926'Expandable functional TFE copolymer fine powder, the expandable functional products obtained therefrom and reaction of the expanded products'20159,221,924'Expandable functional TFE copolymer fine powder, the expandable functional products obtained therefrom and reaction of the expanded products'20159,221,925'Expandable functional TFE copolymer fine powder, the expandable functional products obtained therefrom and reaction of the expanded products'20159,139,669'Expandable functional TFE copolymer fine powder, the expandable functional products obtained therefrom and reaction of the expanded products'20159,039,235'Laser line generating device'20158,937,105'Expandable functional TFE copolymer fine powder, expanded products and reacted products therefrom'20158,853,287'Expandable functional TFE copolymer fine powder, expanded products and reacted products therefrom'20148,809,407'Expandable functional TFE copolymer fine powder, expanded products and reacted products therefrom'20148,802,742'Expandable functional TFE copolymer fine powder, expanded products and reacted products therefrom'20148,658,707'Expandable functional TFE copolymer fine powder, the expanded functional products obtained therefrom and reaction of the expanded products'20148,623,963'High purity perfluoroelastomer composites and a process to produce the same'20148,557,883'Expandable functional TFE copolymer fine powder, the expandable functional products obtained therefrom and reaction of the expanded products'20138,492,127'Bacillus coagulans strains and their applications in L-lactic acid production'2013D0662469'Battery charger'20128,158,402'Acetoin high-yield Bacillus pumilus strain'20128,114,976'Cryptosporidium hominis genes and gene products for chemotherapeutic, immunoprophylactic and diagnostic applications'20128,067,212'Bacillus pumilus strain for high yield of tetramethylpyrazine'20118,063,150'High purity transparent perfluoroelastomer parts and a process to produce the same'20117,598,183'Bi-layer capping of low-K dielectric films'20097,488,781'High purity transparent perfluoroelastomer parts and a process to produce the same'20097,319,068'Method of depositing low k barrier layers'20087,151,053'Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications'20067,125,813'Method of depositing low K barrier layers'20067,117,064'Method of depositing dielectric films'20067,034,409'Method of eliminating photoresist poisoning in damascene applications'20067,001,850'Method of depositing dielectric films'20066,989,979'Active ESD shunt with transistor feedback to reduce latch-up susceptibility'20066,965,253'Reduced-capacitance bus switch in isolated P-well shorted to source and drain during switching'20056,890,850'Method of depositing dielectric materials in damascene applications'20056,868,856'Enhanced remote plasma cleaning'20056,867,957'Stacked-NMOS-triggered SCR device for ESD-protection'20056,849,562'Method of depositing a low k dielectric barrier film for copper damascene application'20056,794,311'Method and apparatus for treating low k dielectric layers to reduce diffusion'20046,777,171'Fluorine-containing layers for damascene structures'20046,764,958'Method of depositing dielectric films'20046,759,327'Method of depositing low k barrier layers'20046,756,834'Direct power-to-ground ESD protection with an electrostatic common-discharge line'20046,757,147'Pin-to-pin ESD-protection structure having cross-pin activation'20046,734,102'Plasma treatment for copper oxide reduction'20046,724,592'Substrate-triggering of ESD-protection device'20046,699,784'Method for depositing a low k dielectric film (K>3.5) for hard mask application'20046,656,837'Method of eliminating photoresist poisoning in damascene applications'20036,553,932'Reduction of plasma edge effect on plasma enhanced CVD processes'20036,326,847'High gain, high speed, rail-to-rail amplifier'20016,107,883'High gain, high speed rail-to-rail amplifier'20006,094,074'High speed common mode logic circuit'20006,066,985'Large swing input/output analog buffer'20006,057,734'Symmetrical analog power amplifier'20006,035,803'Method and apparatus for controlling the deposition of a fluorinated carbon film'20006,011,443'CMOS voltage controlled oscillator'20005,856,753'Output circuit for 3V/5V clock chip duty cycle adjustments'19995,705,921'Low noise 3V/5V CMOS bias circuit'19985,690,870'Method of manufacturing a polyimide-type gas permeation membrane including fluorine'19975,647,894'Gas separating composite membrane and process for producing the same'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2001Based in Milpitas, CA, US· patent location history
2000–2009Patents assigned to APPLIED MATERIALS INC (19)· patent assignee history
2000–2001Patents assigned to SEIKO EPSON CORP (6)· patent assignee history
2003–2009Based in Fremont, CA, US· patent location history
2004–2006Patents assigned to PERICOM SEMICONDUCTOR CORP (6)· patent assignee history
2004–2006Based in San Jose, CA, US· patent location history
2009–2015Based in Hockessin, DE, US· patent location history
2011–2018Patents assigned to XU PING (13)· patent assignee history
2011–2020Based in Shanghai, CN· patent location history
2013–2015Patents assigned to GORE & ASS (11)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC192000–2009
XU PINGself132011–2018
GORE & ASS112013–2015
PERICOM SEMICONDUCTOR CORP62004–2006
SEIKO EPSON CORP62000–2001
Locations
LocationPatentsSpan
Fremont, California, US172003–2009
Hockessin, Delaware, US132009–2015
Milpitas, California, US71998–2001
San Jose, California, US62004–2006
Shanghai, CN42011–2020