Inventor
Evans Y. Lee
Inventor
Milpitas, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps51%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
C23CCoating metallic material7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H01LSemiconductor devices2%
PatentTitleYear
10,504,765Electrostatic chuck assembly having a dielectric filler20198,721,798'Methods for processing substrates in process systems having shared resources'20148,496,756'Methods for processing substrates in process systems having shared resources'20137,374,636'Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor'20087,316,199'Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber'20087,294,224'Magnet assembly for plasma containment'20077,147,719'Double slit-valve doors for plasma processing'20066,916,399'Temperature controlled window with a fluid supply system'20056,863,835'Magnetic barrier for plasma in chamber exhaust'20056,797,639'Dielectric etch chamber with expanded process window'20046,773,544'Magnetic barrier for plasma in chamber exhaust'20046,716,302'Dielectric etch chamber with expanded process window'20046,647,918'Double slit-valve doors for plasma processing'20036,513,452'Adjusting DC bias voltage in plasma chamber'20036,432,259'Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates'20026,364,957'Support assembly with thermal expansion compensation'20026,221,782'Adjusting DC bias voltage in plasma chamber'20016,192,827'Double slit-valve doors for plasma processing'20016,076,482'Thin film processing plasma reactor chamber with radially upward sloping ceiling for promoting radially outward diffusion'20005,891,350'Adjusting DC bias voltage in plasma chambers'19995,605,637'Adjustable dc bias control in a plasma reactor'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2019Patents assigned to APPLIED MATERIALS INC (19)· patent assignee history
1997–2019Based in Milpitas, CA, US· patent location history
2013–2014Patents assigned to CANTWELL DERMOT (2)· patent assignee history
2013–2014Patents assigned to COLLINS KENNETH S (2)· patent assignee history
2013–2014Patents assigned to CRUSE JAMES P (2)· patent assignee history
2013–2014Patents assigned to HARDY CHARLES (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 19 | 1997–2019 |
| CANTWELL DERMOT | 2 | 2013–2014 |
| COLLINS KENNETH S | 2 | 2013–2014 |
| CRUSE JAMES P | 2 | 2013–2014 |
| HARDY CHARLES | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Milpitas, California, US | 21 | 1997–2019 |