Inventor
Scott W. Barry
Inventor
Los Gatos, CA, US
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices57%
H01LSemiconductor devices43%
PatentTitleYear
9,520,462'Semiconductor device having capacitor integrated therein'20169,196,672'Semiconductor device having capacitor integrated therein'20158,963,287'Deep trench capacitor with conformally-deposited conductive layers having compressive stress'20158,487,405'Deep trench capacitor with conformally-deposited conductive layers having compressive stress'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to MAXIM INTEGRATED PRODUCTS (4)· patent assignee history
2013Patents assigned to BARRY SCOTT WILSON (1)· patent assignee history
2013Patents assigned to TIAN LEI (1)· patent assignee history
2013Patents assigned to YING XUEJUN (1)· patent assignee history
2013–2016Based in Los Gatos, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MAXIM INTEGRATED PRODUCTS | 4 | 2013–2016 |
| BARRY SCOTT WILSONself | 1 | 2013 |
| TIAN LEI | 1 | 2013 |
| YING XUEJUN | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Los Gatos, California, US | 4 | 2013–2016 |