Inventor
Chuan-Li Chang
Inventor
Hsinchu, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices36%
H10DInorganic electric semiconductor devices36%
A43CFastenings or attachments of footwear9%
A43DMachines, tools, equipment or methods for manufacturing or repairing footwear9%
F16BDevices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges9%
PatentTitleYear
7,370,441'Hobnail structure'20086,468,863'Split gate field effect transistor (FET) device employing dielectric barrier layer and method for fabrication thereof'20026,417,046'Modified nitride spacer for solving charge retention issue in floating gate memory cell'20026,403,494'Method of forming a floating gate self-aligned to STI on EEPROM'20026,387,757'Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) device'20026,117,732'Use of a metal contact structure to increase control gate coupling capacitance for a single polysilicon non-volatile memory cell'20006,110,782'Method to combine high voltage device and salicide process'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2002Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2000–2002Based in Hsinchu, TW· patent location history
2008Patents assigned to CHANG CHUAN-LI (1)· patent assignee history
2008Based in Chung-Ho City, Taipei Hsien, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 6 | 2000–2002 |
| CHANG CHUAN-LIself | 1 | 2008 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 6 | 2000–2002 |
| Chung-Ho City, Taipei Hsien, TW | 1 | 2008 |