Inventor

Zheng-Yang Pan

Inventor

Zhubei City, TW

Overview

23→

Patents

2017–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices33%

H10DInorganic electric semiconductor devices31%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

C07KPeptides1%

C12NMicroorganisms or enzymes1%

C40BCombinatorial chemistry1%

G01NInvestigating or analysing materials by determining their chemical or physical properties1%

PatentTitleYear

11,011,433NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers2021 10,879,124Method to form a fully strained channel region2020 10,875,905Peptide-MHC compacts2020 10,879,240Fin field effect transistor (FinFET) device structure2020 10,879,126Semiconductor device and method2020 10,879,396Semiconductor device with source/drain structures2020 10,867,799FinFET device and methods of forming same2020 10,734,524Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof2020 10,672,886Structure and method for high-k metal gate2020 10,636,909Formation method of semiconductor device with source/drain structures2020 10,629,496Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers2020 10,535,736Fully strained channel2020 10,522,358FinFET device and methods of forming same2019 10,490,661Dopant concentration boost in epitaxially formed material2019 10,347,764Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof2019 10,269,646Semiconductor device and method2019 10,164,100Formation method and structure semiconductor device with source/drain structures2018 10,043,665Formation method of semiconductor device structure with semiconductor nanowire2018 10,026,840Structure of semiconductor device with source/drain structures2018 9,917,189'Method for detecting presence and location of defects in a substrate'2018 9,899,273'Semiconductor structure with dopants diffuse protection and method for forming the same'2018 9,847,334Structure and formation method of semiconductor device with channel layer2017 9,721,826'Wafer supporting structure, and device and method for manufacturing semiconductor'2017

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (22)· patent assignee history

2017–2021Based in Zhubei City, TW· patent location history

2017Based in Hsinchu County, TW· patent location history

2018Based in Hsinchu, TW· patent location history

2020Patents assigned to PACT PHARMA INC (1)· patent assignee history

2020Based in Freemont, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	22	2017–2021
PACT PHARMA INC	1	2020

Locations

Location	Patents	Span
Zhubei City, TW	20	2017–2021
Freemont, California, US	1	2020
Hsinchu, TW	1	2018
Hsinchu County, TW	1	2017