Inventor
Lea Di Cioccio
Inventor
Saint Ismier, FR
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1024%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H01LSemiconductor devices16%
H10DInorganic electric semiconductor devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C30BSingle-crystal growth4%
Y10TTechnical subjects covered by former us classification4%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
H05KPrinted circuits3%
B01LChemical or physical laboratory apparatus for general use1%
PatentTitleYear
10,020,283Direct metal bonding method20189,620,412'Method for modifying the crystalline structure of a copper element'20179,586,207'Etching method for forming a carrier having inward side walls in particular for confining a droplet for capillary self-assembly'20179,522,450'Support for capillary self-assembly with horizontal stabilisation, fabrication method and use'20169,431,373'Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure'20169,318,527'Method for producing photosensitive infrared detectors'20169,240,389'Method for producing at least one pad assembly on a support for the self-assembly of an integrated circuit chip on the support by the formation of a fluorinated material surrounding the pad and exposure of the pad and the fluorinated material to an ultraviolet treatment in the presence of ozone'20169,064,863'Method for directly adhering two plates together, including a step of forming a temporary protective nitrogen'20159,064,783'Method for the direct bonding of a silicon oxide layer'20159,027,821'Process for direct bonding two elements comprising copper portions and portions of dielectric materials'20158,951,809'Method of transfer by means of a ferroelectric substrate'20158,916,393'Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure'20148,647,983'Simplified copper-copper bonding'20148,642,391'Self-assembly of chips on a substrate'20148,501,537'Methods for bonding semiconductor structures involving annealing processes, and bonded semiconductor structures formed using such methods'20138,302,278'Method and device for separating a structure'20128,093,138'Method of fabricating an epitaxially grown layer'20128,039,370'Method of transferring a layer onto a liquid material'20117,981,238'Method for relaxing a stressed thin film'20117,960,248'Method for transfer of a thin layer'20117,538,010'Method of fabricating an epitaxially grown layer'20097,482,184'Manufacture of a layer of optical interconnection on an electronic circuit'20097,476,595'Method for the molecular bonding of microelectronic components to a polymer film'20096,391,799'Process for fabricating a structure of semiconductor-on-insulator type in particular SiCOI'20026,225,190'Process for the separation of at least two elements of a structure in contact with one another by ion implantation'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2018Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (19)· patent assignee history
2001–2018Based in Saint Ismier, FR· patent location history
2012–2017Patents assigned to DI CIOCCIO LEA (8)· patent assignee history
2014–2017Patents assigned to GUEGUEN PIERRIC (4)· patent assignee history
2015–2017Patents assigned to COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (3)· patent assignee history
2016–2017Patents assigned to ST MICROELECTRONICS CROLLES 2 SAS (4)· patent assignee history
2017Based in Saint Martin, FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 19 | 2001–2018 |
| DI CIOCCIO LEAself | 8 | 2012–2017 |
| GUEGUEN PIERRIC | 4 | 2014–2017 |
| ST MICROELECTRONICS CROLLES 2 SAS | 4 | 2016–2017 |
| COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES | 3 | 2015–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saint Ismier, FR | 24 | 2001–2018 |
| Saint Martin, FR | 1 | 2017 |