LexDanaLexDanabeta
Inventor

Yasuhiro Okamoto

Inventor
Tokyo, JP

Overview

148→
Patents
1986–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 148 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices20%
H01LSemiconductor devices13%
H02NElectric machines not otherwise provided for10%
A61BDiagnosis8%
G02BOptical elements, systems or apparatus8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10TTechnical subjects covered by former us classification4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10NElectric solid-state devices not otherwise provided for2%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
10,863,887Insertion device having universal cord with extending transmission member202010,736,493Inserting device202010,566,183Method of manufacturing semiconductor device and the semiconductor device202010,541,321Manufacturing method of semiconductor device202010,537,229Introduction device202010,517,463Endoscope operation mechanism and endoscope201910,461,159Method of manufacturing semiconductor device and the semiconductor device201910,413,163Introduction device and endoscopic apparatus201910,410,868Semiconductor device and method of manufacturing semiconductor device201910,396,190Semiconductor device and method of manufacturing semiconductor device201910,363,888Wire harness201910,249,727Semiconductor device with silicon nitride film over nitride semiconductor layer and between electrodes201910,249,715Semiconductor device and method of manufacturing the semiconductor device201910,243,070Semiconductor device and method for manufacturing the same201910,199,476Semiconductor device and manufacturing method of semiconductor device201910,188,265Flexible insertion apparatus with input device having actuator force control201910,172,600Insertion apparatus201910,134,908Semiconductor device and manufacturing method thereof201810,117,567Endoscope201810,105,038Insertion apparatus201810,050,142Semiconductor device and a method for manufacturing a semiconductor device201810,014,403Semiconductor device20189,984,884Method of manufacturing semiconductor device with a multi-layered gate dielectric20189,985,108Semiconductor device and method for manufacturing semiconductor device including Al electrode formed on AlxGa(1-x)N layer20189,954,087Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor20189,936,860Bending apparatus20189,895,052'Insertion instrument and insertion apparatus comprising this insertion instrument'20189,861,264'Rigid endoscope'20189,837,519Semiconductor device20179,831,339Semiconductor device and a method for manufacturing a semiconductor device20179,763,564'Introducing apparatus'20179,761,682'Semiconductor device with silicon nitride film on nitride semiconductor layer and manufacturing method thereof'20179,748,225'Semiconductor device with power transistors coupled to diodes'20179,722,062'Semiconductor device and a method for manufacturing a semiconductor device'20179,660,045'Semiconductor device and a method for manufacturing a semiconductor device'20179,636,001'Introduction device'20179,601,609'Semiconductor device'20179,559,183'Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor device'20179,536,978'Semiconductor device'20179,530,879'Semiconductor device and field effect transistor with controllable threshold voltage'20169,520,489'Semiconductor device'20169,502,551'Nitride semiconductor transistor device'20169,375,135'Insertion device comprising operation input portion'20169,375,799'Multi-wire electrical discharge machining system, multi-wire electrical discharge machining apparatus, power supply device, multi-wire electrical discharge machining method, semiconductor substrate, solar cell substrate, substrate manufacturing system, and substrate manufacturing method'20169,364,910'Wire electrical discharge machining system, wire electrical discharge machining method, and workpiece'20169,368,609'Semiconductor device including a trench with a corner having plural tapered portions'20169,339,171'Endoscope'20169,337,325'Semiconductor device and method for manufacturing the same'20169,306,027'Semiconductor device and a method for manufacturing a semiconductor device'20169,272,921'Method for producing alkali metal niobate particles, and alkali metal niobate particles'20169,265,405'Endoscope system'20169,269,803'Semiconductor device'20169,237,837'Insertion device with the operation input unit'20169,231,096'Semiconductor device and field effect transistor with controllable threshold voltage'20169,123,739'Semiconductor device and manufacturing method of semiconductor device'20158,986,195'Medical operation device'20158,981,434'Semiconductor device and field effect transistor'20158,974,376'Introducing device system with bending control'20158,961,402'Endoscope'20158,963,207'Semiconductor device'20158,933,367'Laser processing method'20158,928,038'Field effect transistor containing a group III nitride semiconductor as main component'20158,921,894'Field effect transistor, method for producing the same, and electronic device'20148,920,924'Method for producing alkali metal niobate particles, and alkali metal niobate particles'20148,888,685'Medical system'20148,853,666'Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor'20148,771,618'Method for producing alkali metal niobate particles, and alkali metal niobate particles'20148,772,785'Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device'20148,716,755'Semiconductor device and method for manufacturing the same'20148,716,835'Bipolar transistor'20148,674,407'Semiconductor device using a group III nitride-based semiconductor'20148,674,409'Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device'20148,659,055'Semiconductor device, field-effect transistor, and electronic device'20148,618,578'Field effect transistor'20138,552,471'Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same'20138,525,229'Semiconductor device'20138,466,495'Field effect transistor with reduced gate leakage current'20138,426,895'Semiconductor device and manufacturing method of the same'20138,409,079'Electric bending operation device and medical treatment system including electric bending operation device'20138,394,082'Medical system'20138,395,237'Group nitride bipolar transistor'20138,378,387'Field effect transistor and method of manufacturing the same'20138,378,555'Electromechanical conversion element and actuator'20138,344,422'Semiconductor device'20138,333,689'Medical operation device'20128,198,652'Field effect transistor with reduced gate leakage current'20128,057,907'Optical film, coating composition, polarizing plate and image display device'20118,007,878'Antireflection film, polarizing plate, and image display device'20117,985,984'III-nitride semiconductor field effect transistor'20117,982,953'Antireflection film, and polarizing plate and image display device using the same'20117,973,335'Field-effect transistor having group III nitride electrode structure'20117,968,181'Antireflection film and polarizing plate and image display device using same'20117,863,648'Field effect transistor'20117,859,014'Semiconductor device'20107,800,131'Field effect transistor'20107,758,956'Antireflection film and polarizing plate and image display device using same'20107,705,520'Driving device'20107,691,459'Inorganic fine particle-containing composition, optical film, antireflection film and polarizing film, and polarizing plate and display device using the same'20107,615,868'Electrode, method for producing same and semiconductor device using same'20097,579,751'Optical member driving device'20097,467,547'Fluid-measuring device and fluid-measuring method'20087,459,788'Ohmic electrode structure of nitride semiconductor device'20087,456,546'Drive unit'20087,323,783'Electrode, method for producing same and semiconductor device using same'20087,315,108'Driving device'20087,271,522'Driving device and driving method'20077,268,465'Driving device and optical device using the same'20077,261,869'Processes for preparing calcium carbonate'20077,261,077'Decompressor and vehicle'20077,256,531'Driving apparatus'20077,256,432'Field-effect transistor'20077,250,707'Driving apparatus'20077,071,526'Semiconductor device having Schottky junction electrode'20066,954,023'Linear actuator'20056,838,656'Photoelectric sensor having special display features'20056,727,635'Driving device'20046,717,329'Drive mechanism employing electromechanical transducer and method for controlling the drive mechanism'20046,710,326'Photoelectric sensor having special display features'20046,646,251'Separate type photoelectric switch'20036,627,170'Process for preparing calcium carbonate'20036,555,806'Photoelectric sensor having special display features'20036,528,926'Driving apparatus'20036,512,321'Driving apparatus and method of using same'20036,392,214'Optical unit photoelectric switch fiber-type photoelectric switch and color discrimination sensor'20026,384,493'Drive device and apparatus equipped with said drive device'20026,331,747'Surface acoustic wave motor and apparatus having the same'20016,211,602'Actuator using electromechanical transducer capable of being used in high temperature and high humidity environment and apparatus having the same'20016,190,633'Process for preparing calcium carbonate'20016,188,161'Driving apparatus using transducer'20016,153,963'Drive device'20006,147,434'Drive device using electromechanical transducer and apparatus equipped with the device'20006,124,936'Color discrimination system'20006,114,799'Driving mechanism'20006,111,336'Driving apparatus using transducer'20006,104,129'Multilayer electrostrictive element and method of manufacturing same'20006,092,431'Rotary type driving device employing electromechanical transducer and apparatus provided with the rotary type driving device'20006,094,272'Color discrimination system'20006,051,909'Drive device using electromechanical transducer'20005,994,819'Driving apparatus using transducer'19995,969,464'Drive device using electromechanical transducer and an apparatus employing the drive device'19995,942,384'Silver halide photographic materials and method for processing the same'19995,917,267'Linear drive mechanism using electromechanical conversion element'19995,847,488'Apparatus having drive device using electromechanical transducer'19985,786,654'Movable stage utilizing electromechanical transducer'19985,609,997'Silver halide photographic material and a processing method for that material'19975,589,723'Driving apparatus using transducer'19965,368,983'Method for forming an image'19944,593,121'Novel acrylates and their manufacturing methods'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–2016Based in Kanagawa, JP· patent location history
1996–2005Patents assigned to MINOLTA CO LTD (22)· patent assignee history
1996–2010Based in Tondabayashi, JP· patent location history
2006–2019Based in Tokyo, JP· patent location history
2011–2018Patents assigned to OKAMOTO YASUHIRO (30)· patent assignee history
2012–2015Patents assigned to INOUE TAKASHI (18)· patent assignee history
2012–2015Patents assigned to NAKAYAMA TATSUO (18)· patent assignee history
2012–2020Based in Hachioji, JP· patent location history
2013–2020Patents assigned to RENESAS ELECTRONICS CORP (45)· patent assignee history
2017–2020Based in Ibaraki, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RENESAS ELECTRONICS CORP452013–2020
OKAMOTO YASUHIROself302011–2018
MINOLTA CO LTD221996–2005
INOUE TAKASHI182012–2015
NAKAYAMA TATSUO182012–2015
Locations
LocationPatentsSpan
Tokyo, JP362006–2019
Tondabayashi, JP291996–2010
Hachioji, JP162012–2020
Kanagawa, JP111994–2016
Ibaraki, JP102017–2020