Inventor

Shih-Chang Liu

Inventor

Alian Township, TW

Overview

1998–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 234 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices27%

H10BElectronic memory devices21%

H10DInorganic electric semiconductor devices19%

H10NElectric solid-state devices not otherwise provided for11%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

G11CStatic stores2%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%

B81BMicrostructural devices or systems, e.g. micromechanical devices1%

B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%

PatentTitleYear

11,050,021Method for manufacturing resistive random access memory structure2021 11,037,932Semiconductor arrangement having capacitor separated from active region2021 11,037,983Semiconductor structure and method of forming the same2021 11,018,299Memory cell having resistance variable film and method of making the same2021 11,010,697On-demand resource scheduling2021 10,879,463Phase change memory structure to reduce power consumption2020 10,870,574Method and apparatus for reducing in-process and in-use stiction for MEMS devices2020 10,872,895Method of manufacturing capacitor structure2020 10,868,028Flash memory structure with reduced dimension of gate structure and methods of forming thereof2020 10,868,024Method of forming embedded nonvolatile memory2020 10,840,438Reversed stack MTJ2020 10,840,2873DIC interconnect apparatus and method2020 10,825,825Flash memory structure2020 10,811,504Semiconductor structure for flash memory cells and method of making same2020 10,804,411Semiconductor device and method of forming the same2020 10,790,444Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element2020 10,763,304Semiconductor structure and method of forming the same2020 10,748,895Semiconductor arrangement and formation thereof2020 10,734,394Cell boundary structure for embedded memory2020 10,725,212Lens2020 10,720,568Semiconductor structure and method of manufacturing the same2020 10,720,571Magnetic memory structure and method of forming the same2020 10,665,600Memory devices and method of fabricating same2020 10,658,571Semiconductor structure and method for manufacturing the same2020 10,636,670Method of planarizing semiconductor device2020 10,629,811Resistance variable memory structure and method of forming the same2020 10,622,471Manufacturing method of semiconductor structure2020 10,573,811Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls2020 10,553,785Magnetoresistive random access memory device and method of making same2020 10,535,814Techniques for MRAM MTJ top electrode connection2020 10,535,671Cell boundary structure for embedded memory2020 10,529,916Reversed stack MTJ2020 10,522,532Through via extending through a group III-V layer2019 10,516,026Split gate memory device and method of fabricating the same2019 10,516,107Memory cell having resistance variable film and method of making the same2019 10,510,763Embedded nonvolatile memory and forming method thereof2019 10,509,169Semiconductor structure and manufacturing method of the same2019 10,510,803Semiconductor memory device and method for fabricating the same2019 10,510,952Storage device with composite spacer and method for manufacturing the same2019 10,510,766Flash memory structure with reduced dimension of gate structure and methods of forming thereof2019 10,504,904Semiconductor arrangement with capacitor and method of fabricating the same2019 10,505,110Phase change memory structure to reduce power consumption2019 10,490,742Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element2019 10,490,460Semiconductor arrangement and method of forming2019 10,475,998Resistive random access memory structure2019 10,468,587Semiconductor structure, electrode structure and method of forming the same2019 10,461,089Cell boundary structure for embedded memory2019 10,454,021Semiconductor structure and method of manufacturing the same2019 10,453,932Semiconductor structure for flash memory cells and method of making same2019 10,361,2343DIC interconnect apparatus and method2019 10,355,011Method for forming flash memory structure2019 10,325,910Semiconductor device containing HEMT and MISFET and method of forming the same2019 10,304,848Flash memory structure with reduced dimension of gate structure2019 10,297,604Split gate memory devices and methods of manufacturing2019 10,283,700Semiconductor memory structure with magnetic tunnel junction (MTJ) cell2019 10,273,143Method and apparatus for reducing in-process and in-use stiction for MEMS devices2019 10,276,634Semiconductor memory structure with magnetic tunnel junction (MTJ) cell2019 10,276,584Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates2019 10,270,025Semiconductor structure having magnetic tunneling junction (MTJ) layer2019 10,269,575Semiconductor device with non-linear surface2019 10,269,807Semiconductor arrangement having capacitor separated from active region2019 10,181,558Magnetoresistive random access memory structure and method of forming the same2019 10,164,181Sidewall protection of memory cell2018 10,164,184Resistance variable memory structure and method of forming the same2018 10,158,073Manufacturing method of semiconductor structure2018 10,158,069Memory cell having resistance variable film and method of making the same2018 10,147,794Split gate memory device and method of fabricating the same2018 10,141,438Semiconductor structure and manufacturing method thereof2018 10,134,748Cell boundary structure for embedded memory2018 10,121,805Semiconductor structure and method for manufacturing the same2018 10,115,784Semiconductor device, MIM capacitor and associated fabricating method2018 10,056,448Coplanar metal-insulator-metal capacitive structure2018 10,049,890Semiconductor structure and method of manufacturing the same2018 10,048,220Biosensor field effect transistor having specific well structure and method of forming the same2018 10,032,828Semiconductor memory device and method for fabricating the same2018 10,026,741Logic-compatible memory cell manufacturing method and structure thereof2018 10,008,506Semiconductor arrangement with capacitor2018 10,003,022RRAM cell structure with conductive etch-stop layer2018 9,991,333Metal-insulator-metal (MIM) capacitor structure and method for forming the same2018 9,978,603Memory devices and method of fabricating same2018 9,978,761Self-aligned flash memory device2018 9,978,759Memory devices and method of forming same2018 9,975,757Wafer Level Hermetic Seal Process for microelectromechanical systems (MEMS) devices2018 9,978,754Semiconductor arrangement with capacitor2018 9,966,436Semiconductor device with non-linear surface2018 9,960,285Contact structure2018 9,954,100Method and apparatus for high voltate transistors2018 9,941,3203DIC interconnect apparatus and method2018 9,935,119Dual control gate spacer structure for embedded flash memory2018 9,917,165'Memory cell structure for improving erase speed'2018 9,911,734'Semiconductor device containing HEMT and MISFET and method of forming the same'2018 9,878,899'Method and apparatus for reducing in-process and in-use stiction for MEMS devices'2018 9,876,169RRAM devices and methods2018 9,865,610'Si recess method in HKMG replacement gate technology'2018 9,859,295'Method for forming flash memory structure'2018 9,853,091Side bottom contact RRAM structure2017 9,847,473MRAM structure for process damage minimization2017 9,837,605Memory cell having resistance variable film and method of making the same2017 9,837,606Resistance variable memory structure and method of forming the same2017 9,837,421Semiconductor arrangement having capacitor separated from active region2017 9,837,322Semiconductor arrangement and method of forming2017 9,825,040'Semiconductor arrangement with capacitor and method of fabricating the same'2017 9,825,224'RRAM device'2017 9,818,935'Techniques for MRAM MTJ top electrode connection'2017 9,806,254'Storage device with composite spacer and method for manufacturing the same'2017 9,799,665'Method for forming semiconductor device structure'2017 9,793,339'Method for preventing copper contamination in metal-insulator-metal (MIM) capacitors'2017 9,786,674'Discrete storage element formation for thin-film storage device'2017 9,768,220'Deep trench isolation structure for image sensors'2017 9,748,255'Split gate memory devices and methods of manufacturing'2017 9,741,868'Self-aligned split gate flash memory'2017 9,741,728'Method for forming a split-gate flash memory cell device with a low power logic device'2017 9,735,245'Recessed salicide structure to integrate a flash memory device with a high Îº, metal gate logic device'2017 9,728,545'Method for preventing floating gate variation'2017 9,728,719'Leakage resistant RRAM/MIM structure'2017 9,716,097'Techniques to avoid or limit implant punch through in split gate flash memory devices'2017 9,711,508'Capacitor structure and method of manufacturing the same'2017 9,711,713'Semiconductor structure, electrode structure and method of forming the same'2017 9,691,883'Asymmetric formation approach for a floating gate of a split gate flash memory structure'2017 9,685,604'Magnetoresistive random access memory cell and fabricating the same'2017 9,679,979'Semiconductor structure for flash memory cells and method of making same'2017 9,673,204'Semiconductor device structure and method for forming the same'2017 9,673,205'Embedded nonvolatile memory and forming method thereof'2017 9,673,194'Semiconductor arrangement and formation thereof'2017 9,666,661'Coplanar metal-insulator-metal capacitive structure'2017 9,660,188'Phase change memory structure to reduce leakage from the heating element to the surrounding material'2017 9,653,471'Pattern layout to prevent split gate flash memory cell failure'2017 9,653,682'Resistive random access memory structure'2017 9,646,978'Self-aligned flash memory device with word line having reduced height at outer edge opposite to gate stack'2017 9,620,372'HK embodied flash memory and methods of forming the same'2017 9,620,582'Metal-insulator-metal (MIM) capacitors and forming methods'2017 9,614,048'Split gate flash memory structure and method of making the split gate flash memory structure'2017 9,614,145'Reversed stack MTJ'2017 9,608,195'Magnetic tunnel junction device'2017 9,595,661'Magnetoresistive random access memory structure and method of forming the same'2017 9,589,976'Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits'2017 9,583,591'Si recess method in HKMG replacement gate technology'2017 9,567,207'Recess with tapered sidewalls for hermetic seal in MEMS devices'2017 9,570,454'Structure with emedded EFS3 and FinFET device'2017 9,570,457'Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates'2017 9,564,448'Flash memory structure'2017 9,564,577'MRAM device and fabrication method'2017 9,559,177'Memory devices and method of fabricating same'2017 9,559,294'Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimization'2017 9,553,096'Semiconductor arrangement with capacitor'2017 9,553,154'Memory devices and method of fabricating same'2017 9,543,511'RRAM device'2017 9,536,969'Self-aligned split gate flash memory'2017 9,536,888'Method to prevent oxide damage and residue contamination for memory device'2017 9,525,130'Phase change memory and method of fabricating same'2016 9,508,722'Semiconductor arrangment with capacitor'2016 9,502,515'Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure'2016 9,502,514'Memory devices and method of forming same'2016 9,496,276'CMP fabrication solution for split gate memory embedded in HK-MG process'2016 9,484,351'Split gate memory device and method of fabricating the same'2016 9,484,352'Method for forming a split-gate flash memory cell device with a low power logic device'2016 9,472,645'Dual control gate spacer structure for embedded flash memory'2016 9,466,663'Semiconductor arrangement having capacitor separated from active region'2016 9,450,057'Split gate cells for embedded flash memory'2016 9,431,603'RRAM device'2016 9,425,044'Composite spacer for silicon nanocrystal memory storage'2016 9,425,206'Boundary scheme for embedded poly-SiON CMOS or NVM in HKMG CMOS technology'2016 9,419,218'Resistance variable memory structure and method of forming the same'2016 9,418,901'Semiconductor device containing HEMT and MISFET and method of forming the same'2016 9,406,883'Structure and formation method of memory device'2016 9,397,228'Semiconductor device structure and method for forming the same'2016 9,391,151'Split gate memory device for improved erase speed'2016 9,391,085'Self-aligned split gate flash memory having liner-separated spacers above the memory gate'2016 9,356,142'Pattern layout to prevent split gate flash memory cell failure'2016 9,356,231'MRAM device and fabrication method thereof'2016 9,306,158'MRAM device and fabrication method thereof'2016 9,299,768'Semiconductor device with non-linear surface'2016 9,299,927'Memory cell having resistance variable film and method of making the same'2016 9,299,784'Semiconductor device with non-linear surface'2016 9,293,392'3DIC interconnect apparatus and method'2016 9,287,279'Silicon nitride (SiN) encapsulating layer for silicon nanocrystal memory storage'2016 9,269,829'Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure'2016 9,257,498'Process to improve performance for metal-insulator-metal (MIM) capacitors'2016 9,257,571'Memory gate first approach to forming a split gate flash memory cell device'2016 9,257,568'Structure for flash memory cells'2016 9,209,392'RRAM cell with bottom electrode'2015 9,196,825'Reversed stack MTJ'2015 9,178,144'RRAM cell with bottom electrode'2015 9,172,033'MRAM device and fabrication method thereof'2015 9,166,153'System and process to remove film from semiconductor devices'2015 9,159,842'Embedded nonvolatile memory'2015 9,142,761'Method for fabricating a magnetic tunnel junction device'2015 9,136,393'HK embodied flash memory and methods of forming the same'2015 9,130,156'Process to remove film from semiconductor devices'2015 9,087,981'Methods of forming a magnetic tunnel junction device'2015 9,082,651'Memory devices and method of forming same'2015 9,076,681'Memory devices and method of fabricating same'2015 9,048,316'Flash memory structure and method of forming the same'2015 9,040,951'Resistance variable memory structure and method of forming the same'2015 8,999,777'Method of conducting a direction-specific trimming process for contact patterning'2015 8,999,833'Method and apparatus for controlling gate dimensions of memory devices'2015 8,987,033'Method for forming CMOS image sensors'2015 8,932,897'Phase change memory cell'2015 8,932,900'Phase change memory and method of fabricating same'2015 8,921,959'MRAM device and fabrication method thereof'2014 8,912,573'Semiconductor device containing HEMT and MISFET and method of forming the same'2014 8,889,460'Sidewall for backside illuminated image sensor metal grid and method of manufacturing same'2014 8,872,149'RRAM structure and process using composite spacer'2014 8,853,768'Method of fabricating MONOS semiconductor device'2014 8,822,237'Hole first hardmask definition'2014 8,710,560'Embedded bonding pad for image sensors'2014 8,685,783'Phase change memory cell'2014 8,629,531'Structure and method to reduce wafer warp for gallium nitride on silicon wafer'2014 8,610,227'Formation of embedded micro-lens'2013 8,610,229'Sidewall for backside illuminated image sensor metal grid and method of manufacturing same'2013 8,569,849'Hole first hardmask definition'2013 8,501,572'Spacer structure for transistor device and method of manufacturing same'2013 8,445,953'Structure for flash memory cells'2013 8,313,959'Hole first hardmask definition'2012 8,288,750'Phase change memory device with air gap'2012 8,278,122'Method for forming MTJ cells'2012 8,273,625'Structure for flash memory cells'2012 8,258,545'Integrated circuit including a bipolar transistor and methods of making the same'2012 8,227,850'Gated semiconductor device and method of fabricating same'2012 8,114,740'Profile of flash memory cells'2012 7,928,499'Profile of flash memory cells'2011 7,785,966'Method for fabricating floating gates structures with reduced and more uniform forward tunneling voltages'2010 7,700,473'Gated semiconductor device and method of fabricating same'2010 7,687,794'Method and structure for uniform contact area between heater and phase change material in PCRAM device'2010 7,667,261'Split-gate memory cells and fabrication methods thereof'2010 7,652,318'Split-gate memory cells and fabrication methods thereof'2010 7,563,675'Ladder poly etching back process for word line poly planarization'2009 7,297,598'Process for erase improvement in a non-volatile memory device'2007 7,253,470'Floating gate with unique profile by means of undercutting for split-gate flash memory device'2007 7,153,755'Process to improve programming of memory cells'2006 7,144,773'Method for preventing trenching in fabricating split gate flash devices'2006 6,924,199'Method to form flash memory with very narrow polysilicon spacing'2005 5,933,343'Multi-deck power converter module'1999 5,812,387'Multi-deck power converter module'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–1999Based in Brighton, MA, US· patent location history

2005–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (54)· patent assignee history

2005–2021Based in Kaohsiung, TW· patent location history

2009–2021Based in Alian Township, TW· patent location history

2010–2018Based in Yuku Village, TW· patent location history

2012–2015Patents assigned to LIU SHIH-CHANG (18)· patent assignee history

2012–2015Patents assigned to TSAI CHIA-SHIUNG (16)· patent assignee history

2012–2013Patents assigned to LO CHI-HSIN (4)· patent assignee history

2012–2020Based in Hsinchu, TW· patent location history

2015–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (176)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	176	2015–2021
TAIWAN SEMICONDUCTOR MFG	54	2005–2016
LIU SHIH-CHANGself	18	2012–2015
TSAI CHIA-SHIUNG	16	2012–2015
LO CHI-HSIN	4	2012–2013

Locations

Location	Patents	Span
Alian Township, TW	159	2009–2021
Kaohsiung, TW	63	2005–2021
Hsinchu, TW	3	2012–2020
Yuku Village, TW	2	2010–2018
Brighton, Massachusetts, US	2	1998–1999