Inventor
George S. Tulevski
Inventor
White Plains, NY, US
Overview
Patents· 83 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures14%
H10KOrganic electric solid-state devices14%
H01LSemiconductor devices11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10DInorganic electric semiconductor devices8%
C01BNon-metallic elements8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
Y10TTechnical subjects covered by former us classification4%
H01BCables3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
PatentTitleYear
11,127,903Formation of carbon nanotube-containing devices202110,960,433Controlled exposure of in-vivo sensors202110,830,646Multispectral plasmonic thermal imaging device202010,830,645Multispectral plasmonic thermal imaging device202010,830,647Multispectral plasmonic thermal imaging device202010,768,109Chemical sensing based on plasmon resonance in carbon nanotubes202010,761,089Bifunctional acid monolayers for the selective placement of carbon nanotubes202010,600,965Self-assembly of nanostructures202010,566,537Carbon nanotube-graphene hybrid transparent conductor and field effect transistor202010,559,755Heterogeneous nanostructures for hierarchal assembly202010,367,145Self-assembly of nanostructures201910,367,146Formation of carbon nanotube-containing devices201910,297,709Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same201910,283,668Photovoltaic devices with an interfacial band-gap modifying structure and methods for forming the same201910,243,144Formation of carbon nanotube-containing devices201910,243,143Heterogeneous nanostructures for hierarchal assembly201910,209,186Chemical sensing based on plasmon resonance in carbon nanotubes201910,096,778Formation of carbon nanotube-containing devices201810,084,139Formation of carbon nanotube-containing devices201810,043,976Self-assembly of nanostructures201810,036,744Bifunctional acid monolayers for the selective placement of carbon nanotubes20189,999,899Controlled exposure of in-vivo sensors20189,954,175Carbon nanotube-graphene hybrid transparent conductor and field effect transistor20189,887,361'Methods for forming a carbon nanotube-graphene hybrid film on a substrate'20189,884,827'Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers'20189,859,500'Formation of carbon nanotube-containing devices'20189,806,265'Heterogeneous nanostructures for hierarchal assembly'20179,691,987'Self-assembly of nanostructures'20179,685,530'Replacement metal gate dielectric cap'20179,663,369'Cerium (IV) salts as effective dopant for carbon nanotubes and graphene'20179,643,926'Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers'20179,620,622'Replacement metal gate dielectric cap'20179,543,534'Self-aligned carbon nanotube transistor including source/drain extensions and top gate'20179,543,535'Self-aligned carbon nanotube transistor including source/drain extensions and top gate'20179,428,805'DNA sequencing using a suspended carbon nanotube'20169,419,097'Replacement metal gate dielectric cap'20169,409,102'Isolation of single-walled carbon nanotubes from double and multi-walled carbon nanotubes'20169,371,561'DNA sequencing using a suspended carbon nanotube'20169,331,330'Composite anode structure for high energy density lithium-ion batteries'20169,324,475'Doped carbon nanotubes and transparent conducting films containing the same'20169,293,365'Hardmask removal for copper interconnects with tungsten contacts by chemical mechanical polishing'20169,273,004'Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers'20169,177,688'Carbon nanotube-graphene hybrid transparent conductor and field effect transistor'20159,162,883'Doped carbon nanotubes and transparent conducting films containing the same'20159,123,454'Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure'20159,105,853'N-dopant for carbon nanotubes and graphene'20159,105,702'Transistors from vertical stacking of carbon nanotube thin films'20159,099,542'Transistors from vertical stacking of carbon nanotube thin films'20159,040,364'Carbon nanotube devices with unzipped low-resistance contacts'20159,029,841'Carbon nanotube devices with unzipped low-resistance contacts'20159,017,813'Doped carbon nanotubes and transparent conducting films containing the same'20158,968,582'Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure'20158,969,115'Transparent conductive electrode stack containing carbon-containing material'20158,912,525'Chemical oxidation of graphene and carbon nanotubes using Cerium (IV) ammonium nitrate'20148,895,417'Reducing contact resistance for field-effect transistor devices'20148,853,034'Doped graphene films with reduced sheet resistance'20148,785,262'Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition'20148,786,018'Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition'20148,785,911'Graphene or carbon nanotube devices with localized bottom gates and gate dielectric'20148,772,141'Doping carbon nanotubes and graphene for improving electronic mobility'20148,772,910'Doping carbon nanotubes and graphene for improving electronic mobility'20148,766,345'Area-efficient capacitor using carbon nanotubes'20148,765,547'Area-efficient capacitor using carbon nanotubes'20148,753,912'Nano/microwire solar cell fabricated by nano/microsphere lithography'20148,741,678'Transparent conductive electrode stack containing carbon-containing material'20148,642,432'N-dopant for carbon nanotubes and graphene'20148,604,559'Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure'20138,587,065'Local bottom gates for graphene and carbon nanotube devices'20138,492,293'High density selective deposition of carbon nanotubes onto a substrate'20138,465,647'Isolation of single-walled carbon nanotubes from double and multi-walled carbon nanotubes'20138,394,727'High density selective deposition of carbon nanotubes onto a substrate'20138,395,774'Graphene optical sensor'20138,293,607'Doped graphene films with reduced sheet resistance'20128,227,171'Photosensitive self-assembled monolayer for selective placement of hydrophilic structures'20128,211,735'Nano/microwire solar cell fabricated by nano/microsphere lithography'20128,138,102'Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure'20128,124,463'Local bottom gates for graphene and carbon nanotube devices'20128,057,984'Photosensitive self-assembled monolayer for selective placement of hydrophilic structures'20118,039,909'Semiconductor nanowires charge sensor'20117,888,528'Photosensitive self-assembled monolayer for selective placement of hydrophilic structures'20117,732,119'Photosensitive self-assembled monolayer for selective placement of hydrophilic structures'20107,727,505'Methods for separating carbon nanotubes by enhancing the density differential'20107,514,063'Method for the purification of semiconducting single walled carbon nanotubes'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2021Patents assigned to IBM (80)· patent assignee history
2009–2020Based in White Plains, NY, US· patent location history
2011–2017Patents assigned to TULEVSKI GEORGE S (20)· patent assignee history
2011–2017Patents assigned to AFZALI-ARDAKANI ALI (16)· patent assignee history
2012–2016Patents assigned to TULEVSKI GEORGE STOJAN (7)· patent assignee history
2012–2016Based in Yorktown Heights, NY, US· patent location history
2014–2017Patents assigned to CHANDRA BHUPESH (8)· patent assignee history
2014–2017Based in Armonk, NY, US· patent location history
2016–2021Based in Croton-on-Hudson, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 80 | 2009–2021 |
| TULEVSKI GEORGE Sself | 20 | 2011–2017 |
| AFZALI-ARDAKANI ALI | 16 | 2011–2017 |
| CHANDRA BHUPESH | 8 | 2014–2017 |
| TULEVSKI GEORGE STOJANself | 7 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| White Plains, New York, US | 46 | 2009–2020 |
| Croton-on-Hudson, New York, US | 31 | 2016–2021 |
| Yorktown Heights, New York, US | 4 | 2012–2016 |
| Armonk, New York, US | 2 | 2014–2017 |