Inventor
Yukinori Nakamura
Inventor
Nagoya, JP
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
C23CCoating metallic material19%
H03HImpedance networks, e.g. resonant circuits9%
H10HInorganic light-emitting semiconductor devices having potential barriers7%
Y10TTechnical subjects covered by former us classification7%
F04CRotary-piston, or oscillating-piston, positive-displacement machines for liquids2%
F16FSprings2%
G06FElectric digital data processing2%
H01JElectric discharge tubes or discharge lamps2%
PatentTitleYear
10,936,393Transmission and reception system, data reception apparatus, and data reception method using plural transmision paths20218,268,079'Vacuum film deposition apparatus'20127,955,437'Apparatus for fabricating a III-V nitride film'20117,883,750'Thin films and a method for producing the same'20117,303,789'Methods for producing thin films on substrates by plasma CVD'20077,067,847'Semiconductor element'20066,989,202'Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer'20066,815,867'Substrate usable for an acoustic surface wave device, a method for fabricating the same substrate and an acoustic surface wave device having the same substrate'20046,759,715'Epitaxial base substrate and epitaxial substrate'20046,727,164'Method for fabricating a semiconducting nitride film, susceptor tray, and apparatus for fabricating a semiconducting nitride film'20046,709,703'Method for fabricating a III-V nitride film and an apparatus for fabricating the same'20046,649,288'Nitride film'20036,649,493'Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer'20036,623,877'III nitride epitaxial wafer and usage of the same'20036,554,896'Epitaxial growth substrate and a method for producing the same'20036,426,519'Epitaxial growth substrate and a method for producing the same'20026,342,748'Surface acoustic wave device, substrate therefor and method of manufacturing the substrate'20026,183,555'Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate'20015,936,329'Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate'19994,591,322'Eccentric archimedian screw pump of rotary displacement type'19863,983,963'Multifacially formed panel impact absorber'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976Based in Yokohama, JP· patent location history
1986Patents assigned to HEISHIN SOBI KK (1)· patent assignee history
1986Based in Kobe, JP· patent location history
1999–2011Patents assigned to NGK INSULATORS LTD (17)· patent assignee history
1999–2011Based in Nagoya, JP· patent location history
2012Patents assigned to FUJIFILM CORP (1)· patent assignee history
2012Patents assigned to KASHIWAYA MAKOTO (1)· patent assignee history
2012Based in Kanagawa, JP· patent location history
2021Patents assigned to FUJITSU LTD (1)· patent assignee history
2021Based in Kawasaki, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NGK INSULATORS LTD | 17 | 1999–2011 |
| FUJIFILM CORP | 1 | 2012 |
| FUJITSU LTD | 1 | 2021 |
| HEISHIN SOBI KK | 1 | 1986 |
| KASHIWAYA MAKOTO | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nagoya, JP | 17 | 1999–2011 |
| Kawasaki, JP | 1 | 2021 |
| Kanagawa, JP | 1 | 2012 |
| Kobe, JP | 1 | 1986 |
| Yokohama, JP | 1 | 1976 |