Inventor
Han-Jin Lim
Inventor
Seoul, KR
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices28%
H10BElectronic memory devices26%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
C23CCoating metallic material4%
B82YSpecific uses or applications of nanostructures1%
C07CAcyclic or carbocyclic compounds1%
G11CStatic stores1%
H10NElectric solid-state devices not otherwise provided for1%
PatentTitleYear
10,825,889Semiconductor device including capacitor and method of forming the same202010,756,185Semiconductor device including vertical channel layer and method of manufacturing the same202010,685,959Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure202010,651,194Semiconductor device including dielectric layer202010,468,256Methods of forming material layer201910,403,638Vertical memory devices and methods of manufacturing the same201910,325,992Semiconductor device and method of manufacturing the same201910,103,026Methods of forming material layer201810,090,323Semiconductor device including dielectric layer20189,812,557'Method of manufacturing semiconductor device'20179,716,094'Semiconductor device having capacitor and method of fabricating the semiconductor device'20179,646,971'Semiconductor devices including nanowire capacitors and fabricating methods thereof'20179,543,196'Methods of fabricating semiconductor devices using nanowires'20179,484,219'Methods of fabricating memory devices using wet etching and dry etching'20169,455,259'Semiconductor devices including diffusion barriers with high electronegativity metals'20169,449,973'Semiconductor device'20169,437,420'Capacitors including amorphous dielectric layers and methods of forming the same'20169,362,422'Semiconductor device and method for fabricating the same'20169,349,821'Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure'20169,287,270'Semiconductor device and fabricating method thereof'20169,240,414'Semiconductor devices having self-aligned contact pads'20169,230,922'Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same'20169,202,844'Semiconductor devices having blocking layers and methods of forming the same'20159,202,813'Electrode structure, method of fabricating the same, and semiconductor device including the electrode structure'20159,184,227'Methods of manufacturing semiconductor devices having self-aligned contact pads'20159,153,590'Semiconductor devices including buried channels'20159,041,122'Semiconductor devices having metal silicide layers and methods of manufacturing such semiconductor devices'20158,481,398'Method of forming semiconductor device having a capacitor'20138,039,344'Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same'20118,012,823'Methods of fabricating stack type capacitors of semiconductor devices'20117,722,926'Organometallic compounds and methods of forming thin films including the use of the same'20107,432,183'Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the same'20087,271,055'Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitors'20077,091,102'Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed thereby'20067,049,232'Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same'20067,034,350'Capacitors including a cavity containing a buried layer'20066,930,013'Method of forming a capacitor of an integrated circuit device'20056,838,719'Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces'20056,809,363'Storage electrode of a semiconductor memory device'20046,743,678'Methods for manufacturing semiconductor memory devices'20046,649,502'Methods of forming multilayer dielectric regions using varied deposition parameters'20036,583,056'Storage electrode of a semiconductor memory device and method for fabricating the same'20036,284,589'Method of fabricating concave capacitor including adhesion spacer'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (43)· patent assignee history
2001–2020Based in Seoul, KR· patent location history
2013–2016Patents assigned to LIM HAN-JIN (7)· patent assignee history
2015–2016Patents assigned to IM KI-VIN (3)· patent assignee history
2015–2016Patents assigned to KIM BONG-HYUN (3)· patent assignee history
2015–2016Patents assigned to HWANG IN-SEAK (2)· patent assignee history
2020Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 43 | 2001–2020 |
| LIM HAN-JINself | 7 | 2013–2016 |
| IM KI-VIN | 3 | 2015–2016 |
| KIM BONG-HYUN | 3 | 2015–2016 |
| HWANG IN-SEAK | 2 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 42 | 2001–2020 |
| Hwaseong-si, KR | 1 | 2020 |