Inventor
James A. Kirchgessner
Inventor
Tempe, AZ, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices50%
H01LSemiconductor devices13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H01FMagnets3%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner3%
H03HImpedance networks, e.g. resonant circuits3%
H05KPrinted circuits3%
PatentTitleYear
11,018,247Semiconductor device with a base link region and method therefor202110,825,922Semiconductor device and method of manufacturing a semiconductor device202010,763,782Tunable inductors202010,269,943Semiconductor device structure with non planar slide wall20199,786,770'Semiconductor device structure with non planar slide wall'20179,105,678'Semiconductor devices with recessed base electrode'20158,664,698'Bipolar transistor and method with recessed base electrode'20148,084,786'Silicided base structure for high frequency transistors'20117,932,145'Method of forming a bipolar transistor and semiconductor component thereof'20117,821,103'Counter-doped varactor structure and method'20107,816,221'Dielectric ledge for high frequency devices'20107,803,685'Silicided base structure for high frequency transistors'20107,638,386'Integrated CMOS and bipolar devices method and structure'20097,611,955'Method of forming a bipolar transistor and semiconductor component thereof'20097,442,616'Method of manufacturing a bipolar transistor and bipolar transistor thereof'20087,084,485'Method of manufacturing a semiconductor component, and semiconductor component formed thereby'20066,461,925'Method of manufacturing a heterojunction BiCMOS integrated circuit'20025,134,082'Method of fabricating a semiconductor structure having MOS and bipolar devices'19924,927,775'Method of fabricating a high performance bipolar and MOS device'19904,803,175'Method of fabricating a bipolar semiconductor device with silicide contacts'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–2002Patents assigned to MOTOROLA INC (4)· patent assignee history
1989–1990Based in Mesa, AZ, US· patent location history
1992–2021Based in Tempe, AZ, US· patent location history
2006–2017Patents assigned to FREESCALE SEMICONDUCTOR INC (12)· patent assignee history
2011–2015Patents assigned to JOHN JAY P (3)· patent assignee history
2011–2015Patents assigned to KIRCHGESSNER JAMES A (3)· patent assignee history
2017–2021Patents assigned to NXP USA INC (5)· patent assignee history
2017–2019Based in Austin, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FREESCALE SEMICONDUCTOR INC | 12 | 2006–2017 |
| NXP USA INC | 5 | 2017–2021 |
| MOTOROLA INC | 4 | 1989–2002 |
| JOHN JAY P | 3 | 2011–2015 |
| KIRCHGESSNER JAMES Aself | 3 | 2011–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tempe, AZ, US | 16 | 1992–2021 |
| Austin, Texas, US | 2 | 2017–2019 |
| Mesa, AZ, US | 2 | 1989–1990 |