Inventor
Masataka Yanagihara
Inventor
Niiza, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices60%
H10HInorganic light-emitting semiconductor devices having potential barriers20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
PatentTitleYear
8,704,207'Semiconductor device having nitride semiconductor layer'20148,530,935'Semiconductor device with buffer layer for mitigating stress exerted on compound semiconductor layer'20137,745,850'Nitride-based semiconductor device with reduced leakage current'20107,652,282'Semiconductor wafer, devices made therefrom, and method of fabrication'20107,569,870'Gallium-nitride-based compound semiconductor device'20097,518,154'Nitride semiconductor substrate and semiconductor element built thereon'20096,979,844'Light-emitting semiconductor device and method of fabrication'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2014Patents assigned to SANKEN ELECTRIC CO LTD (7)· patent assignee history
2005Based in Fujimi, JP· patent location history
2009–2014Based in Niiza, JP· patent location history
2010Based in Saitama, JP· patent location history
2013–2014Patents assigned to YANAGIHARA MASATAKA (2)· patent assignee history
2014Patents assigned to MATSUO TETSUJI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANKEN ELECTRIC CO LTD | 7 | 2005–2014 |
| YANAGIHARA MASATAKAself | 2 | 2013–2014 |
| MATSUO TETSUJI | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niiza, JP | 5 | 2009–2014 |
| Saitama, JP | 1 | 2010 |
| Fujimi, JP | 1 | 2005 |