Inventor

Yoshikazu Fujimori

Inventor
Kyoto, JP

Overview

48→
Patents
2000–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores19%
H03KPulse technique14%
H10DInorganic electric semiconductor devices12%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein9%
H10BElectronic memory devices7%
H01LSemiconductor devices5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B41JTypewriters3%
H10NElectric solid-state devices not otherwise provided for3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,522,734Device using a piezoelectric element and method for manufacturing the same201910,032,977Device using a piezoelectric element and method for manufacturing the same20189,714,866'Substrate having a hole, method for manufacturing the substrate, infrared sensor, and method for manufacturing the infrared sensor'20179,195,933'Electronic circuit and electronic device including the same'20159,171,850'Ferroelectric capacitor'20159,100,014'Nonvolatile storage gate, operation method for the same, and nonvolatile storage gate embedded logic circuit, and operation method for the same'20159,064,593'Data holding device and logic operation circuit using the same'20158,951,976'Progression inhibitor for disease attributed to abnormal accumulation of liver fat'20158,947,904'Data holding device and logic operation circuit using the same'20158,837,194'Data holding device and logic operation circuit using the same'20148,779,486'Ferroelectric capacitor'20148,194,432'Ferroelectric memory device for adjusting the capacitor of a bit line'20128,154,786'Light control device, semiconductor wafer, and light control system'20128,144,384'Light controller'20128,136,399'Angular rate sensor with vibrator'20128,125,423'Voltage control circuit, voltage control method and light control apparatus utilizing the same'20128,014,186'Ferroelectric memory device and operating method for the same'20117,894,115'Light control apparatus having light modulating film'20117,672,034'Method for manufacturing optical modulator, optical modulator, and optical modulation system'20107,564,610'Light control device and light control system using same'20097,531,862'Semiconductor device having ferroelectric substance capacitor'20097,464,131'Logical calculation circuit, logical calculation device, and logical calculation method'20087,450,412'Logical operation circuit and logical operation method'20087,428,565'Logical operation circuit and logical operation device'20087,372,608'Light control device and light control system using the same'20087,317,794'Enciphering and deciphering apparatus, and enciphering and deciphering method'20087,295,360'Structure having light modulating film and light control device using the same'20077,292,382'Light control unit'20077,218,142'Switch matrix circuit, logical operation circuit, and switch circuit'20077,195,928'Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film'20077,038,930'Memory device with function to perform operation, and method of performing operation and storage'20067,039,847'Coding-decoding device and method for conversion of binary sequences'20067,026,841'Logical operation circuit and logical operation method'20067,012,460'IC device having a transistor switch for a power supply'20066,944,045'Data holding apparatus and data read out method'20056,903,572'Switch matrix circuit, logical operation circuit, and switch circuit'20056,833,574'Semiconductor device having ferroelectric substance capacitor'20046,806,758'IC device having a transistor switch for a power supply'20046,788,567'Data holding device and data holding method'20046,740,532'Method of manufacturing a ferroelectric thin film'20046,730,522'Method of forming solid of a ferroelectric or high dielectric material and method of manufacturing semiconductor device employing the same'20046,674,109'Nonvolatile memory'20046,392,920'Nonvolatile memory and its driving method'20026,385,076'Nonvolatile memory and its driving method'20026,342,727'Tape carrier device for a tab'20026,124,547'Tape carrier package'20006,097,058'Ferroelectric memory device and a method of manufacturing thereof'20006,084,291'Tape carrier for TAB, integrated circuit device, a method of making the same, and an electronic device'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2019Patents assigned to ROHM CO LTD (44)· patent assignee history
2000–2002Patents assigned to SEIKO EPSON CORP (3)· patent assignee history
2000–2019Based in Kyoto, JP· patent location history
2000–2002Based in Suwa, JP· patent location history
2008Based in Ukyo-Ku, JP· patent location history
2012–2015Patents assigned to FUJIMORI YOSHIKAZU (9)· patent assignee history
2012–2015Patents assigned to FUCHIKAMI TAKAAKI (3)· patent assignee history
2012–2015Patents assigned to KIMURA HIROMITSU (3)· patent assignee history
2015Based in Nagano, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ROHM CO LTD442000–2019
FUJIMORI YOSHIKAZUself92012–2015
FUCHIKAMI TAKAAKI32012–2015
KIMURA HIROMITSU32012–2015
SEIKO EPSON CORP32000–2002
Locations
LocationPatentsSpan
Kyoto, JP432000–2019
Suwa, JP32000–2002
Nagano, JP12015
Ukyo-Ku, JP12008