Inventor

Mei-Yun Wang

Inventor

Hsinchu, TW

Overview

2000–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 85 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices30%

H01LSemiconductor devices23%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%

H10BElectronic memory devices1%

H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers1%

C23CCoating metallic material0%

G01SRadio direction-finding0%

G06FElectric digital data processing0%

PatentTitleYear

10,878,839Device for preventing cables against external damage based on sound source localization2020 10,872,781Semiconductor device and a method for fabricating the same2020 10,867,846Fin field effect transistor (finFET) device structure with protection layer and method for forming the same2020 10,868,118Methods of forming epitaxial source/drain features in semiconductor devices2020 10,861,740Method of forming trenches with different depths2020 10,854,615FinFET having non-merging epitaxially grown source/drains2020 10,825,737Prevention of contact bottom void in semiconductor fabrication2020 10,797,050Fin field effect transistor (finFET) device structure with capping layer and method for forming the same2020 10,790,197Semiconductor arrangement and formation thereof2020 10,755,945Metal contacts on metal gates and methods thereof2020 10,727,068Method for manufacturing semiconductor structure with mask structure2020 10,685,880Methods for reducing contact depth variation in semiconductor fabrication2020 10,651,178Compact electrical connection that can be used to form an SRAM cell and method of making the same2020 10,636,697Contact formation method and related structure2020 10,546,755Semiconductor device and a method for fabricating the same2020 10,535,555Contact plugs and methods forming same2020 10,510,614Semiconductor arrangement and formation thereof2019 10,504,990Isolation features and methods of fabricating the same2019 10,505,045Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact2019 10,490,459Method for source/drain contact formation in semiconductor devices2019 10,475,788Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same2019 10,468,257Mechanisms for semiconductor device structure2019 10,418,453Forming metal contacts on metal gates2019 10,283,403Method of forming trenches with different depths2019 10,276,448Semiconductor arrangement and formation thereof2019 10,276,437Contact structure of gate structure2019 10,269,621Contact plugs and methods forming same2019 10,177,038Prevention of contact bottom void in semiconductor fabrication2019 10,163,703Method for forming self-aligned contact2018 10,158,018Semiconductor device and manufacturing method thereof2018 10,121,675Semiconductor device and a method for fabricating the same2018 10,109,530Semiconductor arrangement and formation thereof2018 10,096,525Method for fabricating self-aligned contact in a semiconductor device2018 10,083,841Semiconductor device and a method for fabricating the same2018 9,779,984'Method of forming trenches with different depths'2017 9,754,838'Semiconductor arrangement and formation thereof'2017 9,685,439'Semiconductor device and manufacturing method thereof'2017 9,679,812'Semiconductor device with self-aligned contact'2017 9,653,594'Semiconductor device and method for forming the same'2017 9,647,116'Method for fabricating self-aligned contact in a semiconductor device'2017 9,576,847'Method for forming integrated circuit structure with thinned contact'2017 9,536,754'Method of forming contact structure of gate structure'2017 9,520,327'Methods of forming low resistance contacts'2016 9,508,844'Semiconductor arrangement and formation thereof'2016 9,496,367'Mechanism for forming metal gate structure'2016 9,449,886'Semiconductor device and formation thereof'2016 9,437,495'Mask-less dual silicide process'2016 9,425,048'Mechanisms for semiconductor device structure'2016 9,331,173'Semiconductor device having a carbon containing insulation layer formed under the source/drain'2016 9,318,488'Semiconductor device and formation thereof'2016 9,312,259'Integrated circuit structure with thinned contact'2016 9,299,657'Semiconductor device and method for manufacturing semiconductor device'2016 9,252,019'Semiconductor device and method for forming the same'2016 9,231,098'Mechanism for forming metal gate structure'2016 9,165,838'Methods of forming low resistance contacts'2015 9,123,563'Method of forming contact structure of gate structure'2015 9,093,299'Semiconductor arrangement and formation thereof'2015 8,791,528'Methods of manufacturing metal-silicide features'2014 8,536,010'Method for making a disilicide'2013 8,304,319'Method for making a disilicide'2012 8,202,799'Methods of manufacturing metal-silicide features'2012 7,795,644'Integrated circuits with stress memory effect and fabrication methods thereof'2010 7,795,119'Flash anneal for a PAI, NiSi process'2010 7,781,316'Methods of manufacturing metal-silicide features'2010 7,678,694'Method for fabricating semiconductor device with silicided gate'2010 7,514,348'Sidewall coverage for copper damascene filling'2009 7,396,767'Semiconductor structure including silicide regions and method of making same'2008 7,282,450'Sidewall coverage for copper damascene filling'2007 7,268,065'Methods of manufacturing metal-silicide features'2007 7,247,915'Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology'2007 7,205,234'Method of forming metal silicide'2007 7,105,439'Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology'2006 7,015,126'Method of forming silicided gate structure'2006 6,884,669'Hatted polysilicon gate structure for improving salicide performance and method of forming the same'2005 6,884,736'Method of forming contact plug on silicide structure'2005 6,864,143'Eliminate bridging between gate and source/drain in cobalt salicidation'2005 6,849,543'Cobalt silicide formation method employing wet chemical silicon substrate oxidation'2005 6,686,280'Sidewall coverage for copper damascene filling'2004 6,589,836'One step dual salicide formation for ultra shallow junction applications'2003 6,531,389'Method for forming incompletely landed via with attenuated contact resistance'2003 6,451,701'Method for making low-resistance silicide contacts between closely spaced electrically conducting lines for field effect transistors'2002 6,358,844'Tungsten deposition process with dual-step nucleation'2002 6,242,338'Method of passivating a metal line prior to deposition of a fluorinated silica glass layer'2001 6,096,651'Key-hole reduction during tungsten plug formation'2000 6,077,779'Multi-step deposition to improve the conformality of ionized PVD films'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (34)· patent assignee history

2000–2020Based in Hsinchu, TW· patent location history

2006–2020Based in Jhubei City, TW· patent location history

2012–2016Patents assigned to WANG MEI-YUN (4)· patent assignee history

2012–2016Patents assigned to WU CHII-MING (4)· patent assignee history

2012–2014Patents assigned to CHANG CHIH-WEI (3)· patent assignee history

2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (48)· patent assignee history

2017Based in Chu Pei, TW· patent location history

2020Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	48	2016–2020
TAIWAN SEMICONDUCTOR MFG	34	2000–2016
WANG MEI-YUNself	4	2012–2016
WU CHII-MING	4	2012–2016
CHANG CHIH-WEI	3	2012–2014

Locations

Location	Patents	Span
Hsinchu, TW	46	2000–2020
Jhubei City, TW	37	2006–2020
Shanghai, CN	1	2020
Chu Pei, TW	1	2017