Inventor

Masayuki Tomoyasu

Inventor
Nirasaki, JP

Overview

22→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H01JElectric discharge tubes or discharge lamps25%
C23CCoating metallic material11%
G05BControl or regulating systems in general6%
Y02PClimate change mitigation technologies in the production or processing of goods6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H01LSemiconductor devices5%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
PatentTitleYear
11,018,046Substrate processing apparatus including edge ring20219,859,175'Substrate processing system, method of managing the same and method of manufacturing semiconductor device with the same'20189,799,561'Method for fabricating a semiconductor device'20178,175,736'Method and system for performing a chemical oxide removal process'20127,877,161'Method and system for performing a chemical oxide removal process'20117,648,610'Baffle plate, apparatus for producing the same, method of producing the same, and gas processing apparatus containing baffle plate'20107,505,879'Method for generating multivariate analysis model expression for processing apparatus, method for executing multivariate analysis of processing apparatus, control device of processing apparatus and control system for processing apparatus'20097,477,960'Fault detection and classification (FDC) using a run-to-run controller'20097,289,866'Plasma processing method and apparatus'20077,172,675'Observation window of plasma processing apparatus and plasma processing apparatus using the same'20077,153,387'Plasma processing apparatus and method of plasma processing'20067,047,095'Process control system and process control method'20066,544,380'Plasma treatment method and apparatus'20036,423,242'Etching method'20026,264,788'Plasma treatment method and apparatus'20016,106,737'Plasma treatment method utilizing an amplitude-modulated high frequency power'20006,074,518'Plasma processing apparatus'20005,904,780'Plasma processing apparatus'19995,900,103'Plasma treatment method and apparatus'19995,888,907'Plasma processing method'19995,343,047'Ion implantation system'19945,067,798'Laser beam scanning system'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2012Patents assigned to TOKYO ELECTRON LTD (19)· patent assignee history
1991–2010Based in Nirasaki, JP· patent location history
2006–2011Based in Yamanashi, JP· patent location history
2012Patents assigned to CHEN LEMUEL (1)· patent assignee history
2012Patents assigned to FUNK MERRITT (1)· patent assignee history
2012Patents assigned to IWAMI AKIRA (1)· patent assignee history
2012Based in Tokyo, JP· patent location history
2017–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (3)· patent assignee history
2017–2018Based in Seongnam-si, KR· patent location history
2021Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOKYO ELECTRON LTD191991–2012
SAMSUNG ELECTRONICS CO LTD32017–2021
CHEN LEMUEL12012
FUNK MERRITT12012
IWAMI AKIRA12012
Locations
LocationPatentsSpan
Nirasaki, JP151991–2010
Yamanashi, JP32006–2011
Seongnam-si, KR22017–2018
Hwaseong-si, KR12021
Tokyo, JP12012